EP0331467B1
Expired / Lapsed
EP
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Method of forming semiconductor thin film
Assignee: Fujitsu Ltd
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Filing: 1989-03-01
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Granted: 1994-09-14
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Expires: 2009-03-01
Abstract
No abstract record available.
Inventors
- 👤 Takashi Eshita
- 👤 Fumitake Saginumadai Sky Mansion 105 Mieno
- 👤 Yuji Furumura
- 👤 Takuya Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 06:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S148/154; Y10S148/169; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
89 words
A method of forming a semiconductor thin layer on a silicon substrate, comprising the steps of depositing a first amorphous layer (2) of a compound semiconductor on the silicon substrate (1), and growing a first epitaxial layer (3) of the compound semiconductor on the amorphous layer (2), characterised in that the method further comprises the steps of: depositing a second amorphous layer (4) of the compound semiconductor on the first epitaxial layer (3), and growing a second epitaxial layer (5) of the compound semiconductor on the second amorphous layer.
Claim 2
Dependent Claim
31 words
A method according to claim 1, in which, after the second epitaxial growth step, a further stage of deposition of an amorphous layer and growth of an epitaxial layer is performed.
Claim 3
Dependent Claim
18 words
A method according to claim 1 or 2, in which the compound semiconductor is a III-V compound semiconductor.
Claim 4
Dependent Claim
14 words
A method according to claim 3, in which the III-V compound semiconductor is GaAs.
Claim 5
Independent Claim
31 words
A method according to any preceding claim, in which the deposition of the amorphous layers and the growth of the epitaxial layers are performed by a metalorganic chemical vapor deposition process.
Claim 6
Dependent Claim
24 words
A method according to claim 5, in which the deposition of the amorphous layers is performed at a temperature of from 350 to 450°C.
Claim 7
Dependent Claim
26 words
A method according to claim 5 or 6, in which the growth of the epitaxial layers is performed at a temperature of from 650 to 750°C.
Claim 8
Independent Claim
33 words
A method according to any of claims 1 to 4, in which the deposition of the amorphous layers and the growth of the epitaxial layers are performed by a molecular beam epitaxy process.
References Cited (Backward Citations)
No citation records indexed.
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