US5028976A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complementary MOS integrated circuit device
Assignee: Canon Inc
•
Filing: 1990-05-29
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Granted: 1991-07-02
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Expires: 2010-05-29
Abstract
Abstract A complementary MOS integrated circuit device has an MOS transistor of one conductivity type formed on a semiconductor substrate and an MOS transistor of another conductivity type opposite to the one conductivity type formed on the MOS transistor of one conductivity type through a separate layer. A dissimilar material whose nucleation density is sufficiently larger than that of the material of the separate layer and which is fine enough so that only a single nucleus of a semiconductor layer material grows is provided on the separate layer. The MOS transistor of the opposite conductivity type is formed in a monocrystalline semiconductor layer or substantial monocrystalline semiconductor layer provided by growing around the single nucleus formed on the hetero material.
Inventors
- 👤 Masaharu Ozaki
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:42
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
153 words
A complementary MOS integrated circuit device comprising: a semiconductor substrate; a first MOS transistor of a first conductivity type formed on said substrate; an electrically insulating isolation layer covering said first MOS transistor; a nucleation surface of non-single-crystalline material provided on a surface of said isolation layer, comprising a material different from said isolation layer, having a nucleation density larger than said isolation layer, and having a sufficiently small area such that only a single nucleus can be formed thereon from which a single crystal is grown by a vapor crystal growth process; a single crystal semiconductor layer growing along and covering said nucleation surface; a second MOS transistor of a second conductivity type formed on said single crystal semiconductor layer, said second conductivity type is opposite to the first conductivity type; and an electrical connection means for electrically connecting said first MOS transistor with said second MOS transistor through said isolation layer.
Claim 2
Dependent Claim
153 words
A complementary MOS integrated circuit device comprising: a semiconductor substrate; a first MOS transistor of a first conductivity type formed on said substrate; an electrically insulating isolation layer covering said first MOS transistor; a nucleation surface of non-single-crystalline material provided on a surface of said isolation layer, comprising a material different from said isolation layer, having a nucleation density larger than said isolation layer, and having a sufficiently small area such that only a single nucleus can be formed thereon from which a single crystal is grown by a vapor crystal growth process; a single crystal semiconductor layer growing along and covering said nucleation surface; a second MOS transistor of a second conductivity type formed on said single crystal semiconductor layer, said second conductivity type is opposite to the first conductivity type; and an electrical connection means for electrically connecting said first MOS transistor with said second MOS transistor through said isolation layer.
Claim 3
Dependent Claim
15 words
A device according to claim 1, wherein said nucleation surface is made of polycrystalline material.
Claim 4
Dependent Claim
30 words
A device according to claim 1, wherein the nucleation density of said nucleation surface is at least 10 3 times greater than the nucleation density of electrically insulting isolation layer.
Claim 5
Independent Claim
118 words
A method of producing a complementary MOS integrated circuit device comprising the steps of: covering a first MOS transistor of a first conductivity type provided on a semiconductor substrate with an electrically insulating isolation layer; providing a nucleation surface of non-single-crystalline material having a nucleation density larger than the surface of the electrically insulating isolation layer on the electrically insulating isolation layer, the nucleation surface having a sufficiently small area that only a single nucleus can be formed thereon from which a single crystal is grown; forming a single-crystal semiconductor layer by a vapor crystal growth process; and forming a second MOS transistor of second conductivity type, opposite to the first conductivity type, within the single-crystal semiconductor layer.
Claim 6
Independent Claim
118 words
A method of producing a complementary MOS integrated circuit device comprising the steps of: covering a first MOS transistor of a first conductivity type provided on a semiconductor substrate with an electrically insulating isolation layer; providing a nucleation surface of non-single-crystalline material having a nucleation density larger than the surface of the electrically insulating isolation layer on the electrically insulating isolation layer, the nucleation surface having a sufficiently small area that only a single nucleus can be formed thereon from which a single crystal is grown; forming a single-crystal semiconductor layer by a vapor crystal growth process; and forming a second MOS transistor of second conductivity type, opposite to the first conductivity type, within the single-crystal semiconductor layer.
Claim 7
Dependent Claim
15 words
A method according to claim 4, wherein the nucleation surface is made of polycrystalline material.
Claim 8
Dependent Claim
17 words
A method according to claim 4, wherein the crystal growth process is a chemical vapor deposition process.
Claim 9
Dependent Claim
31 words
A method according to claim 4, wherein the nucleation density of the nucleation surface is at least 10 3 times greater than the nucleation density of the electrically insulating isolation layer.
Claim 10
Dependent Claim
23 words
A device according to claim 1, wherein said electrically insulating isolation layer comprises silicon oxide, and wherein said nucleation surface comprises silicon nitride.
Claim 11
Dependent Claim
23 words
A device according to claim 4, wherein said electrically insulating isolation layer comprises silicon oxide, and wherein said nucleation surface comprises silicon nitride.
Claim 12
Dependent Claim
25 words
A device according to claim 1, wherein said nucleation surface comprises a region made by modifying a material composition of said electrically insulating isolation layer.
Claim 13
Dependent Claim
24 words
A device according to claim 4, wherein said nucleation surface comprises a region made by modifying a material composition of electrically insulating isolation layer.
Claim 14
Dependent Claim
13 words
A device according to claim 1, wherein said nucleation surface comprises non-crystalline material.
Claim 15
Dependent Claim
13 words
A device according to claim 4, wherein said nucleation surface comprises non-crystalline material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |