EP0252757A2
Expired / Lapsed
EP
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Photoelectric conversion device
Assignee: Canon Inc
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Filing: 1987-07-10
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Granted: —
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Expires: 2007-07-10
Abstract
Abstract A photoelectric conversion device of the type having a photosensor region and a circuit section for processing at least an output signal from the photosensor region, wherein on a first layer formed with an electronic element constituting the circuit section, a second layer with a deposition surface is formed directly or through an interposed insulation layer, and wherein at least one of the electronic element and the photosensor is formed in a crystal layer which has grown from a single nucleus formed on a nucleus forming region on the deposition surface of the second layer, the single nucleus being sufficiently fine for making only a single crystal grow and having a sufficiently high nucleation density than that of the material of the second layer surface.
Inventors
- 👤 Masaharu Ozaki
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:56
CPC Classifications
H; H10; H10D; H10D88/00; C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B25/00; C30B25/02; C30B25/18; H10F; H10F39/00; H10F39/10; H10F39/107; H10F71/00; H10F71/10; H10F71/107; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/166; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/152; Y10S148/164
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
125 words
A photoelectric conversion device of the type having a photosensor region and a circuit section for processing at least an output signal from the photosensor region, wherein on a first layer formed with an electronic element constituting said circuit section, a second layer with a deposition surface is formed directly or through an interposed insulation layer, and wherein at least one of said electronic element and said photosensor is formed in a crystal layer which has grown from a single nucleus formed on a nucleus forming region on the deposition surface of said second layer, said single nucleus being sufficiently fine for making only a single crystal grow and having a sufficiently high nucleation density than that of the material of said second layer surface.
Claim 2
Dependent Claim
125 words
A photoelectric conversion device of the type having a photosensor region and a circuit section for processing at least an output signal from the photosensor region, wherein on a first layer formed with an electronic element constituting said circuit section, a second layer with a deposition surface is formed directly or through an interposed insulation layer, and wherein at least one of said electronic element and said photosensor is formed in a crystal layer which has grown from a single nucleus formed on a nucleus forming region on the deposition surface of said second layer, said single nucleus being sufficiently fine for making only a single crystal grow and having a sufficiently high nucleation density than that of the material of said second layer surface.
Claim 3
Dependent Claim
14 words
A photoelectric conversion device according to Claim 1, wherein said photosensor is a photodiode.
Claim 4
Dependent Claim
16 words
A photoelectric conversion device according to Claim 1, wherein said second layer is made of SiO₂.
Claim 5
Dependent Claim
17 words
A photoelectric conversion device according to Claim 1, wherein said photosensor is formed in said crystal layer.
Claim 6
Dependent Claim
7 words
A photoelectric conversion device according of Si₃N₄.
Claim 7
Dependent Claim
7 words
A photoelectric conversion device according of Si₃N₄.
Claim 8
Dependent Claim
18 words
A photoelectric conversion device according to Claim 1, wherein said first layer is made of a silicon semiconductor.
Claim 9
Dependent Claim
16 words
A photoelectric conversion device according to Claim 1, wherein said circuit section has a MOS transistor.
Claim 10
Dependent Claim
16 words
A photoelectric conversion device according to Claim 1, wherein said circuit section has a bipolar transistor.
References Cited (Backward Citations)
No citation records indexed.
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