US4800527A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Canon Inc
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Filing: 1987-10-23
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Granted: 1989-01-24
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Expires: 2007-10-23
Abstract
Abstract A semiconductor memory device comprises: a charge holding capacitor formed on a semiconductor substrate; an insulating layer formed on the capacitor; and a transistor formed on a monocrystalline or substantially monocrystalline semiconductor layer, which is provided by forming, on the insulating layer, a hetero material of a nucleation density sufficiently higher than that of the insulating layer and of a size smaller enough to allow growth of a single nucleus of a semiconductor layer, followed by crystal growth around a single nucleus formed on the hetero material.
Inventors
- 👤 Masaharu Ozaki
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:23
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/30; H10B12/37; H10B12/373; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
87 words
A semiconductor memory device comprising: a charge holding capacitor formed on a semiconductor substrate; an insulating layer formed on said capacitor; and a transistor formed on a monocrystalline or substantially monocrystalline semiconductor layer which is provided by forming, on said insulating layer, a hetero material of a nucleation density sufficiently higher than that of said insulating layer and of a size small enough to allow growth of a single nucleus of a semiconductor layer, followed by crystal growth around a single nucleus formed on said hetero material.
Claim 2
Dependent Claim
87 words
A semiconductor memory device comprising: a charge holding capacitor formed on a semiconductor substrate; an insulating layer formed on said capacitor; and a transistor formed on a monocrystalline or substantially monocrystalline semiconductor layer which is provided by forming, on said insulating layer, a hetero material of a nucleation density sufficiently higher than that of said insulating layer and of a size small enough to allow growth of a single nucleus of a semiconductor layer, followed by crystal growth around a single nucleus formed on said hetero material.
References Cited (Backward Citations)
US4721987A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-24 | 1992-07-25 | 1993-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-24 | 1996-07-25 | 1997-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-24 | 2000-07-25 | 2001-01-24 | $7700.00 | Window Closed / Lapsed |