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US5281834A Expired / Lapsed US ⏱️ 0.0 years remaining

Non-silicon and silicon bonded structure and method of manufacture

Assignee: Motorola Solutions Inc
•
Filing: 1990-08-31
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Granted: 1994-01-25
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Expires: 2010-08-31
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Abstract

Abstract A non-silicon substrate is bonded to a silicon substrate with a stress-relief layer between the non-silicon substrate and the silicon substrate. The stress-relief layer reduces the stress between the non-silicon substrate and the silicon substrate. The stress is created by the difference in the thermal expansion coefficients of the two materials. The stress-relief layer may be a low melting point metal, a semiconductor layer having its thermal expansion coefficient close to the thermal expansion coefficient of the non-silicon substrate. The silicon substrate and/or the non-silicon substrate may have a silicon dioxide layer formed thereon such that the silicon dioxide layer is adjacent to the stress-relief layer.

Inventors

  • 👤 Bertrand F. Cambou
  • 👤 H. Ming Liaw
  • 👤 Mamoru Tomozane

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 06:24
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 86 words
A structure, comprising: a first self-supporting structure comprised of a silicon substrate; a stress-relief layer disposed on the first self-supporting structure; and a second self-supporting structure comprised of a non-silicon semiconductor substrate disposed on the stress-relief layer, wherein the stress-relief layer is comprised of a semiconductor layer having a thermal expansion coefficient close to the thermal expansion coefficient of the non-silicon semiconductor substrate and wherein the second self-supporting structure is further comprised of an oxide layer disposed between the non-silicon semiconductor substrate and the stress-relief layer.
Claim 2
Dependent Claim 86 words
A structure, comprising: a first self-supporting structure comprised of a silicon substrate; a stress-relief layer disposed on the first self-supporting structure; and a second self-supporting structure comprised of a non-silicon semiconductor substrate disposed on the stress-relief layer, wherein the stress-relief layer is comprised of a semiconductor layer having a thermal expansion coefficient close to the thermal expansion coefficient of the non-silicon semiconductor substrate and wherein the second self-supporting structure is further comprised of an oxide layer disposed between the non-silicon semiconductor substrate and the stress-relief layer.
Claim 3
Dependent Claim 76 words
A structure, comprising: a first self-supporting structure comprised of a silicon substrate; a stress-relief layer disposed on the first self-supporting structure; and a second self-supporting structure comprised of a non-silicon semiconductor substrate disposed on the stress-relief layer, wherein the stress relief layer is comprised of a metal layer having a low melting point and wherein the second self-supporting structure is further comprised of an oxide layer disposed between the non-silicon semiconductor substrate and the stress-relief layer.
Claim 4
Dependent Claim 76 words
A structure, comprising: a first self-supporting structure comprised of a silicon substrate; a stress-relief layer disposed on the first self-supporting structure; and a second self-supporting structure comprised of a non-silicon semiconductor substrate disposed on the stress-relief layer, wherein the stress relief layer is comprised of a metal layer having a low melting point and wherein the second self-supporting structure is further comprised of an oxide layer disposed between the non-silicon semiconductor substrate and the stress-relief layer.

References Cited (Backward Citations)

US3935040A Cited
US4632712A Cited
US4639277A Cited
US4928154A Cited
US4717681A Cited
US4845044A Cited
US4963949A Cited
US4891329A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-24 1997-07-26 1998-01-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-24 2001-07-26 2002-01-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-24 2005-07-26 2006-01-25 $7700.00 Window Closed / Lapsed

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