US4639277A
Expired / Lapsed
US
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Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
Assignee: Eastman Kodak Co
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Filing: 1984-07-02
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Granted: 1987-01-27
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Expires: 2004-07-02
Abstract
Abstract There is disclosed a substrate having thereon a layer of a semiconductor material, and a method for depositing and heating the semiconductor material on the substrate, wherein the substrate comprises a layer of organic polymer, a layer of metal or metal alloy, and a layer of dielectric material wherein the layer of dielectric material has a surface, remote from the metal, that is contiguous with the semiconductor material.
Inventors
- 👤 Gilbert A. Hawkins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3458; H10P14/382; Y; Y10; Y10S; Y10S148/00; Y10S148/054; Y10S430/00; Y10S430/143; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
94 words
A substrate having thereon a layer of semiconductor material containing one or more majority carrier semiconductor devices, said substrate comprising, in order, a layer of organic polymer; a layer of metal or metal alloy; and a layer of dielectric material completely isolating said metal or metal alloy later from said semiconductor material; said dielectric layer and said metal or metal alloy layer together having thickness that are sufficient to disipate the heat that occurs when said semiconductor material is heated to 1000° C., without causing significant decomposition or thermal expansion of said polymer layer.
Claim 2
Dependent Claim
94 words
A substrate having thereon a layer of semiconductor material containing one or more majority carrier semiconductor devices, said substrate comprising, in order, a layer of organic polymer; a layer of metal or metal alloy; and a layer of dielectric material completely isolating said metal or metal alloy later from said semiconductor material; said dielectric layer and said metal or metal alloy layer together having thickness that are sufficient to disipate the heat that occurs when said semiconductor material is heated to 1000° C., without causing significant decomposition or thermal expansion of said polymer layer.
Claim 3
Dependent Claim
43 words
A substrate and semiconductor layer as defined in claim 1, wherein said polymer comprises from 5 to 65 percent recurring units derived from dicarboxylic acids, organic diols and their respective derivatives such that said polymer has a Tg of at least 200° C.
Claim 4
Dependent Claim
34 words
A substrate and semiconductor layer as defined in claim 1, wherein said metal or metal alloy has a thermal conductivity at 300° K which is at least as large as that of polycrystalline tin.
Claim 5
Dependent Claim
29 words
A substrate and semiconductor layer as defined in claim 1, wherein said dielectric layer comprises SiO 2 and said semiconductor layer comprises large grain polysilicon or single crystalline silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-26 | 1990-07-28 | 1991-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-26 | 1994-07-28 | 1995-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-26 | 1998-07-28 | 1999-01-27 | $7700.00 | Window Closed / Lapsed |