US3914856A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Economical solar cell for producing electricity
Assignee: Individual
•
Filing: 1972-06-05
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Granted: 1975-10-28
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Expires: 1992-06-05
Abstract
Abstract This invention relates to a method for economically and rapidly producing solar cells, made of either silicon or of germanium. Complete solar cells are deposited in a carrier substrate by processes geared to large scale production at high production rates not obtainable from the present state of art.
Inventors
- 👤 Pao-Hsien Fang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:47
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F10/00; H10F10/10; H10F10/14; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F99/00; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/007; Y10S148/12; Y10S148/122; Y10S148/142; Y10S148/15; Y10S148/158; Y10S148/169; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
85 words
A METHOD FOR PRODUCING A SOLAR CELL DEVICE HAVING SILICON SOLAR CELLS SUPPORTED BY AN ELECTRICALLY CONDUCTIVE, ALUMINUM SUBSTRATE, SAID METHOD COMPRISING THE STEPS OF DEPOSITING AND GROWING A THIN LAYER OF CRYSTALLINE SILICON OF SPECIFIC IMPURITYY TYPE AND CONCENTRATION ON THE ALUMINUM SUBSTRATE USING THE ALUMINUM AS THE NUCLEATION SITE FOR GROWTH OF THE SILICON CRYSTALS AND FOR AUTO-DOPING OF THE SILICON, FORMING P-N JUNCTIONS TO ENABLE THE DEVICE TO PERFORM PHOTOVOLTAIC ENERGY CONVERSION, AND SECURING FRONT ELECTRODES AND CONNETION LEADS TO THE DEVICE.
Claim 2
Independent Claim
85 words
A METHOD FOR PRODUCING A SOLAR CELL DEVICE HAVING SILICON SOLAR CELLS SUPPORTED BY AN ELECTRICALLY CONDUCTIVE, ALUMINUM SUBSTRATE, SAID METHOD COMPRISING THE STEPS OF DEPOSITING AND GROWING A THIN LAYER OF CRYSTALLINE SILICON OF SPECIFIC IMPURITYY TYPE AND CONCENTRATION ON THE ALUMINUM SUBSTRATE USING THE ALUMINUM AS THE NUCLEATION SITE FOR GROWTH OF THE SILICON CRYSTALS AND FOR AUTO-DOPING OF THE SILICON, FORMING P-N JUNCTIONS TO ENABLE THE DEVICE TO PERFORM PHOTOVOLTAIC ENERGY CONVERSION, AND SECURING FRONT ELECTRODES AND CONNETION LEADS TO THE DEVICE.
Claim 3
Dependent Claim
26 words
The method of claim 1 to improve the efficiency of silicon solar cells by carrying out a thermal annealing step between the first and second steps.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said thin layer of crystalline silicon has a thickness of approximately 10 microns.
Claim 5
Dependent Claim
17 words
The method of claim 1 further comprising the step of coating an anti-reflection and anti-corrosion agent thereon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |