EP0342937B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Manufacturing a semiconductor wafer having a III-V group semiconductor compound layer on a silicon substrate
Assignee: Fujitsu Ltd
•
Filing: 1989-05-16
•
Granted: 1994-07-27
•
Expires: 2009-05-16
Abstract
No abstract record available.
Inventors
- 👤 Kanetake Takasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 17:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S148/154; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
109 words
A method of manufacturing a semiconductor wafer comprising the steps of forming a first amorphous layer (2) of a III-V group semiconductor compound on a silicon substrate (1), and forming a first monocrystalline layer (3) of said semiconductor compound on the said amorphous layer (2); characterised by the further steps of forming a second amorphous layer (4) of the said semiconductor compound on the first monocrystalline layer (3), and bringing about solid phase epitaxial growth, from the said first monocrystalline layer (3), through the said second amorphous layer (4) so as to transform that second amorphous layer (4) into a second monocrystalline layer (4a) of the said semiconductor compound.
Claim 2
Dependent Claim
42 words
A method as claimed in claim 1, wherein said III-V group semiconductor compound is selected from the group comprising GaAs, GaP, GaAs x P 1-x , In x Ga 1-x As, In x Ga 1-x As x P 1-x , and InP.
Claim 3
Dependent Claim
37 words
A method as claimed in claim 1 or 2, wherein said first amorphous layer (2) has a thickness of about 10nm to 20 nm and is formed at a temperature in the range from 400°C to 450°C.
Claim 4
Independent Claim
35 words
A method as claimed in any preceding claim, wherein said second amorphous layer (4) has a thickness of about 2µm to 5µm and is formed at a temperature in the range from 400°C to 450°C.
Claim 5
Independent Claim
47 words
A method as claimed in any preceding claim, wherein solid phase epitaxial growth is brought about after the formation of the said second amorphous layer (4) by carrying out an annealing process at a temperature lower than that at which said first monocrystalline layer (3) was formed.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 5, wherein said temperature is in the range from about 500°C to about 650°C.
Claim 7
Independent Claim
27 words
A method as claimed in any preceding claim, carried out by using a Metal organic Chemical Vapour Deposition (MOCVD) process or a Molecular Beam Epitaxy (MBE) process.
Claim 8
Independent Claim
90 words
A method as claimed in any preceding claim, wherein formation of said first amorphous layer (2) is carried out at a first temperature, formation of said first monocrystalline layer (3) is carried out at a second temperature higher than said first temperature, formation of said second amorphous layer (4) is carried out at a third temperature lower than said second temperature, and transformation of said second amorphous layer (4) into said second monocrystalline layer (4a) is carried out at a fourth temperature between said second temperature and said third temperature.
Claim 9
Dependent Claim
25 words
A method as claimed in claim 8, wherein said second amorphous layer (4) has a thickness greater than that of said first monocrystalline layer (3).
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.