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US5442191A
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Isotopically enriched semiconductor devices
Assignee: Yale University
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Filing: 1994-07-05
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Granted: 1995-08-15
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Expires: 2014-07-05
Abstract
Abstract A semiconductor structure including a single-crystal region composed of an isotopically enriched material, wherein the isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon; and a semiconductor device formed by using said isotopically enriched semiconductor region.
Inventors
- 👤 Tso-Ping Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H01; H01S; H01S5/00; H01S5/02; H01S5/024; H01S5/02461; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/85; H10H20/824
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
86 words
A semiconductor structure comprising: a single-crystal region composed entirely of a single isotopically enriched material, wherein said isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon and elemental carbon and wherein said isotopically enriched material exhibits enhanced bulk properties as compared to the bulk properties of naturally occurring forms of said material; and a semiconductor device formed by using said isotopically enriched semiconductor region so as to take advantage of the enhanced bulk properties of said isotopically enriched material.
Claim 2
Dependent Claim
86 words
A semiconductor structure comprising: a single-crystal region composed entirely of a single isotopically enriched material, wherein said isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon and elemental carbon and wherein said isotopically enriched material exhibits enhanced bulk properties as compared to the bulk properties of naturally occurring forms of said material; and a semiconductor device formed by using said isotopically enriched semiconductor region so as to take advantage of the enhanced bulk properties of said isotopically enriched material.
Claim 3
Dependent Claim
25 words
The semiconductor structure of claim 1 further comprising a substrate and wherein said isotopically enriched semiconductor region is formed on one surface of said substrate.
Claim 4
Dependent Claim
22 words
The semiconductor structure of claim 2 wherein said isotopically enriched semiconductor region is a layer formed on one surface of said substrate.
Claim 5
Dependent Claim
50 words
The semiconductor structure of claim 1 wherein the enhanced bulk properties of said isotopically enriched material include higher carrier mobilities and/or thermal conductivity in comparison to naturally occurring forms of said material and wherein said semiconductor device exhibits improved device performance due to said higher carrier mobilities and/or thermal conductivity.
Claim 6
Dependent Claim
24 words
The semiconductor structure of claim 1 wherein said subset consists of group II--IV compounds, group III-V compounds, group II-VI compounds, and group IV elements.
Claim 7
Dependent Claim
12 words
The semiconductor structure of claim 5 wherein said subset consists of SiC.
Claim 8
Dependent Claim
17 words
The semiconductor structure of claim 5 wherein said subset consists of GaAs, InSb, InAs, InP, and GaInPAs.
Claim 9
Dependent Claim
16 words
The semiconductor structure of claim 5 wherein said subset consists of CdS, CdTe, HgTe, and HgCdTe.
Claim 10
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein the semiconductor device is an electronic device.
Claim 11
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein the semiconductor device is an electro-optical device.
Claim 12
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein the semiconductor device is an opto-electronic device.
Claim 13
Dependent Claim
18 words
The semiconductor structure of claim 1 further comprising an integrated circuit fabricated in the isotopically enriched semiconductor region.
Claim 14
Dependent Claim
21 words
The semiconductor structure of claim I wherein said isotopically enriched semiconductor region primarily serves to provide heat dissipation for said device.
Claim 15
Dependent Claim
21 words
The semiconductor structure of claim 1 wherein said subset consists of group IV--IV compounds, group III-V compounds, and group II-VI compounds.
Claim 16
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein said subset consists of group IV--IV compounds.
Claim 17
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein said subset consists of group III-V compounds.
Claim 18
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein said subset consists of group II-VI compounds.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-08-14 | 1999-02-13 | 1999-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-14 | 2003-02-13 | 2003-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-14 | 2007-02-13 | 2007-08-15 | $7700.00 | Window Closed / Lapsed |