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US5146314A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for semiconductor circuit chip cooling using a diamond layer

Assignee: University of Colorado Foundation Inc
•
Filing: 1990-10-23
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Granted: 1992-09-08
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Expires: 2010-10-23
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Abstract

Abstract In a semiconductor device, a thin, synthetic diamond film (i.e. a man made film) enhances the transfer of heat from a semiconductor circuit chip to a cooling medium. The heat generating semiconductor circuit chip is located in efficient thermal transfer engagement with one surface of a synthetically deposited diamond film. The opposite surface of the diamond film forms the bottom wall of a cavity that contains a cooling medium. In one embodiment of the invention, the cavity is formed by depositing the diamond film on the surface of a silicon substrate, and then etching the silicon substrate to form an open-top cavity having side walls that comprise the silicon substrate, and having a bottom wall that comprises the diamond film. In a second embodiment of the invention, the open-top cavity is formed by an apertured silicon preform that is bonded to the diamond film. A capping member closes the top of the cavity. A cooling medium is placed within the cavity a fluid cooling medium may be circulated. through the cavity by the use of an inlet and an outlet that are located in the capping member.

Inventors

  • 👤 Jacques I. Pankove

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 22:39
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/40; H10W40/47; H10W40/20; H10W40/25; H10W40/254

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 151 words
A semiconductor integrated device having improved heat removal capability, comprising; a first semiconductor layer having integrated device means formed on one surface thereof, and having a second surface located opposite said one surface, a thin diamond layer bonded directly to said second surface of said first semiconductor layer by synthetically depositing said diamond layer on said second surface, said diamond layer having an exposed surface, a second semiconductor layer on the exposed surface of said diamond layer, said second semiconductor layer having an aperture therein through which a portion of said diamond layer is exposed, a capping member surrounding and enclosing the aperture in said second semiconductor layer, to thereby form a cavity whose inner surfaces comprise the exposed portion of said diamond layer, said second semiconductor layer, and said capping member, and a cooling medium within said cavity in heat transfer contact with said exposed portion of said diamond layer.
Claim 2
Dependent Claim 151 words
A semiconductor integrated device having improved heat removal capability, comprising; a first semiconductor layer having integrated device means formed on one surface thereof, and having a second surface located opposite said one surface, a thin diamond layer bonded directly to said second surface of said first semiconductor layer by synthetically depositing said diamond layer on said second surface, said diamond layer having an exposed surface, a second semiconductor layer on the exposed surface of said diamond layer, said second semiconductor layer having an aperture therein through which a portion of said diamond layer is exposed, a capping member surrounding and enclosing the aperture in said second semiconductor layer, to thereby form a cavity whose inner surfaces comprise the exposed portion of said diamond layer, said second semiconductor layer, and said capping member, and a cooling medium within said cavity in heat transfer contact with said exposed portion of said diamond layer.
Claim 3
Dependent Claim 30 words
The device of claim 1 wherein said capping member is bonded to said second semiconductor layer in a manner to surround and enclose the aperture in said second semiconductor layer.
Claim 4
Dependent Claim 31 words
The device of claim 2 wherein said capping member includes an inlet and an outlet whereby said fluid cooling medium may flow through said cavity from said inlet to said outlet.

References Cited (Backward Citations)

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US3816194A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-09-08 1996-03-09 1996-09-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-09-08 2000-03-09 2000-09-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-09-08 2004-03-09 2004-09-08 $7700.00 Window Closed / Lapsed

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