US3872496A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode
Assignee: Unisys Corp
•
Filing: 1973-09-13
•
Granted: 1975-03-18
•
Expires: 1993-09-13
Abstract
Abstract High frequency diodes are manufactured by methods forming an efficient heat path from the active diode junction through a diamond heat conducting member to a heat sink. A planar preformed element which becomes a permanent part of the diode structure is used to transfer the forces which form the bond between the diamond heat conducting member and the heat sink; simultaneously, the preformed element is bonded to an opposite side of the diamond, becoming a permanent part of the high frequency circuit of the diode.
Inventors
- 👤 Curtis N Potter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 05:12
CPC Classifications
H; H10; H10W; H10W99/00; H10W40/00; H10W40/10; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/5363; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/931; H10W72/932
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
97 words
In a high frequency semiconductor device, diamond heat conductor means having first and second opposed substantially parallel flat polished surfaces, first and second high electrical and thermal conductivity metal layers bonded separately to said respective first and second opposed substantially parallel flat polished surfaces, massive heat sink means bonded to said first metal layer, preformed apertured plate means bonded to said second metal layer simultaneously with the bonding of said massive heat sink means to said first metal layer, and active semiconductor means bonded substantially concentrically within said aperture to said second metal layer within said aperture.
Claim 2
Dependent Claim
97 words
In a high frequency semiconductor device, diamond heat conductor means having first and second opposed substantially parallel flat polished surfaces, first and second high electrical and thermal conductivity metal layers bonded separately to said respective first and second opposed substantially parallel flat polished surfaces, massive heat sink means bonded to said first metal layer, preformed apertured plate means bonded to said second metal layer simultaneously with the bonding of said massive heat sink means to said first metal layer, and active semiconductor means bonded substantially concentrically within said aperture to said second metal layer within said aperture.
Claim 3
Dependent Claim
17 words
Apparatus as described in claim 1, wherein said diamond heat conductor means comprises type IIa diamond material.
Claim 4
Dependent Claim
45 words
Apparatus as described in claim 2 wherein said first and second high electrical and thermal conductivity metal layers each comprise; a thin layer of chromium bonded to said diamond heat conductor means, and a thin layer of gold bonded to said thin layer of chromium.
Claim 5
Dependent Claim
27 words
Apparatus as described in claim 1 further comprising high frequency electrical conductor means bonded to said preformed apertured plate means and to said massive heat sink means.
Claim 6
Dependent Claim
23 words
Apparatus as described in clAim 4 further comprising bias power electrical conductor means affixed to said semiconductor device opposite said second metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-17 | 1978-09-16 | 1979-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-17 | 1982-09-16 | 1983-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-17 | 1986-09-16 | 1987-03-18 | $7700.00 | Window Closed / Lapsed |