US4712609A — Heat sink structure

Claim 1

Independent Claim 165 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes: means, disposed on said heat exchange surface for providing coolant liquid flow over substantially the entirety of said surface and for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles.

Claim 2

Dependent Claim 165 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes: means, disposed on said heat exchange surface for providing coolant liquid flow over substantially the entirety of said surface and for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles.

Claim 3

Dependent Claim 31 words

The semi-conductor heat sink structure of claim 1, further comprising: means disposed on said heat exchange surface, for forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

Claim 4

Dependent Claim 145 words

A semi-conductor heat sink structure including a planar external surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes: means wherein the interior surface of said heat sink structure contains one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in close proximity to said heat exchange surface to provide predetermined liquid flow conditions at said heat exchange surface.

Claim 5

Dependent Claim 145 words

A semi-conductor heat sink structure including a planar external surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes: means wherein the interior surface of said heat sink structure contains one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in close proximity to said heat exchange surface to provide predetermined liquid flow conditions at said heat exchange surface.

Claim 6

Dependent Claim 179 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means disposed on said heat exchange surface, for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the anode heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said anode heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device.

Claim 7

Dependent Claim 179 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means disposed on said heat exchange surface, for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the anode heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said anode heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device.

Claim 8

Dependent Claim 202 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means, disposed on said heat exchange surface for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted for the removal of said semi-conductor device.

Claim 9

Dependent Claim 202 words

A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means, disposed on said heat exchange surface for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted for the removal of said semi-conductor device.

Claim 10

Dependent Claim 186 words

A semi-conductor heat sink structure including a planar surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in the heat exchange region to provide predetermined liquid flow conditions in the proximity of said heat exchange surface, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted to provide a force for the removal of said semi-conductor device.

Claim 11

Dependent Claim 186 words

A semi-conductor heat sink structure including a planar surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in the heat exchange region to provide predetermined liquid flow conditions in the proximity of said heat exchange surface, the improvement wherein said surface for bonding semi-conductor devices includes: channels of predetermined depth and width adjacent to at least two sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted to provide a force for the removal of said semi-conductor device.

Claim 12

Dependent Claim 38 words

In the apparatus of claim 4 the further improvement wherein said heat exchange surface is prepared with means disposed on said heat exchange surface, for forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

Claim 13

Dependent Claim 38 words

In the apparatus of claim 6 the further improvement wherein said heat exchange surface is prepared with means disposed on said heat exchange surface, or forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

Claim 14

Dependent Claim 34 words

In the apparatus of claim 1 the improvement wherein said means for generating pressure gradients comprises said heat exchange surface and said heat exchange surface comprises a contoured surface having a predetermined periodic geometry.

Claim 15

Dependent Claim 28 words

In the apparatus of claim 3 the further improvement wherein each said period of curve is provided with ducting for the alternate injection and removal of said coolant.

Claim 16

Dependent Claim 28 words

In the apparatus of claim 6 the further improvement wherein each said period or curve is provided with ducting for the alternate injection and removal of said coolant.

Claim 17

Dependent Claim 19 words

In the apparatus of claim 11 the further improvement wherein said predetermined periodic curves comprises flutes with flattened cusps.

Claim 18

Dependent Claim 18 words

In the apparatus of claim 6, the further improvement wherein said periodic curves are segments of circular arcs.

Claim 19

Dependent Claim 17 words

In the apparatus of claim 6 the further improvement wherein said liquid coolant comprises a dielectric composition.

Claim 20

Dependent Claim 36 words

In the apparatus of claim 6, the improvement wherein means are provided at the juncture of said periodic curves to join upper and lower internal surfaces of said structure whereby rigidity is provided to said structure.

Claim 21

Dependent Claim 56 words

In the apparatus of claim 2, the further improvement wherein said means comprises cavities and said cavities have dimensions in the range of 0.002 mm to 0.2 mm, and said cavities being spaced apart on said heat exchange surface said spacing generally ranging from 0.03 mm to 3 mm whereby more efficient heat transfer is obtained.

Claim 22

Dependent Claim 22 words

In apparatus of claim 2 the further improvement wherein said heat exchange surface has intimately adherent thereto a thin porous metal layer.

Claim 23

Dependent Claim 19 words

In the apparatus of claim 17 the further improvement wherein said porous metal is of relatively uniform pore size.

Claim 24

Dependent Claim 34 words

In the apparatus of claim 6 the further improvement wherein said substrate surface is made from a metal selected from the group consisting of tungsten, molybdenum or zirconium, or crystalline carbon or variants thereof.

Claim 25

Dependent Claim 33 words

In the apparatus of claim 6 the further improvement wherein said substrate surface is made from a ceramic selected from the group consisting of silicon carbide, alumina, beryllia, aluminum nitride or variants thereof.

Claim 26

Dependent Claim 51 words

In the apparatus of claim 6, wherein a viscous sublayer exists proximate said heat exchange surface, the further improvement wherein said heat exchange surface is further prepared with roughness said roughness having heights ranging from 0.0001" to 0.008" above said heat exchange surface whereby the viscous sublayer may be broken up.

Claim 27

Dependent Claim 63 words

In the apparatus of claim 6 the further improvement wherein said semi-conductor chip is bonded to an intermediate substrate of specified expansion and thermal transfer characteristics, provided with leads and encapsulated and the resulting packaged semi-conductor device then bonded in a thermally intimate manner to said semi-conductor heat sink structure thereby providing high heat transfer and simplifying removal and replacement of defective devices.

Claim 28

Dependent Claim 33 words

In the apparatus of claim 6 the further improvement wherein said channels have the wall, underlying and adjacent said semi-conductor device, shaped wherein said device removal tool may be precisely and advantageously positioned.

Claim 29

Dependent Claim 13 words

In the apparatus of claim 23 said shape of wall comprises a bevel.

Claim 30

Dependent Claim 59 words

In the apparatus of claim 6 the further improvement wherein said heat exchange surface is prepared with cavities said cavities have dimensions in the range of 0.002 mm to 0.2 mm, and said cavities being spaced apart on said heat exchange surface said spacing generally ranging from 0.03 mm to 3 mm whereby more efficient heat transfer is obtained.

Claim 31

Dependent Claim 17 words

In the apparatus of claim 6, the further improvement wherein said liquid coolant comprises a non-dielectric composition.

Claim 32

Dependent Claim 14 words

In the apparatus of claim 14, wherein said dielectric composition is a fluorocarbon refrigerant.

Claim 33

Dependent Claim 12 words

In the apparatus of claim 26, wherein said non-dielectric composition is water.

Claim 34

Dependent Claim 94 words

In the apparatus of claim 25, wherein a viscous sublayer of laminar flow tends to form immediately adjacent said heat exchange surface bounded superiorly by a transition zone to turbulent flow of said liquid, the further improvement wherein said cavities comprise truncated cones whose bases are affixed to the heat exchange surface, said cones containing approximately centered cavities which are exposed to the liquid, the cone height being not less than 0.3 times the height of the viscous sublayer nor more than twice the combined height of the viscous sublayer and the transition zone.

Claim 35

Dependent Claim 41 words

In the apparatus of claim 25, the further improvement whereby the inside surface of said cavities is prepared with micro cavities, the dimensions of said micro cavities being in the range of from about 1×10 -4 mm to 1×10 -2 mm.

Claim 36

Dependent Claim 168 words

In a heat sink for structurally supporting at least a portion of a heat generating device in intimate thermal relationship therewith and for removing heat flux from the region of thermal contact therebetween at or about a heat exchange surface, said heat sink providing a heat exchange fluid environment proximate said heat exchange surface and including flow means for providing a current of coolant fluid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles thereon, the improvement comprising fluid pressure developing means disposed on said heat exchange surface for forming pressure gradients in said coolant fluid having a pressure component generally perpendicular to said surface while maintaining generally constant the relative flow velocity of fluid relative to said surface, said pressure component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said fluid, to facilitate removal of said nucleate bubbles, and further wherein coolant flows over substantially the entirety of said heat exchange surface.

Claim 37

Dependent Claim 168 words

In a heat sink for structurally supporting at least a portion of a heat generating device in intimate thermal relationship therewith and for removing heat flux from the region of thermal contact therebetween at or about a heat exchange surface, said heat sink providing a heat exchange fluid environment proximate said heat exchange surface and including flow means for providing a current of coolant fluid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles thereon, the improvement comprising fluid pressure developing means disposed on said heat exchange surface for forming pressure gradients in said coolant fluid having a pressure component generally perpendicular to said surface while maintaining generally constant the relative flow velocity of fluid relative to said surface, said pressure component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said fluid, to facilitate removal of said nucleate bubbles, and further wherein coolant flows over substantially the entirety of said heat exchange surface.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-12-14	1991-06-15	1991-12-15	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-12-14	1995-06-15	1995-12-15	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-12-14	1999-06-15	1999-12-15	$7700.00	Window Closed / Lapsed

Heat sink structure

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