US3922775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency diode and manufacture thereof
Assignee: Unisys Corp
•
Filing: 1974-11-22
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Granted: 1975-12-02
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Expires: 1994-11-22
Abstract
Abstract High frequency diodes are manufactured by methods forming an efficient heat path from the active diode junction through a diamond heat conducting member to a heat sink. A planar preformed element which becomes a permanent part of the diode structure is used to transfer the forces which form the bond between the diamond heat conducting member and the heat sink; simultaneously, the preformed element is bonded to an opposite side of the diamond, becoming a permanent part of the high frequency circuit of the diode.
Inventors
- 👤 Curtis N Potter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; H10W; H10W40/00; H10W40/10; H10W99/00; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/934
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
128 words
The method of making an active high frequency semiconductor device including the steps of: forming first and second opposed substantially flat polished surfaces on diamond heat conducting means, coating said first and second polished surfaces, after cleaning, with respective first and second thin layers of metal having high electrical and thermal conductivities, placing said first thin layer of metal against massive heat sink means, placing preformed apertured plate means against said second thin layer of metal, and simultaneously bonding under heat and pressure said first thin layer of metal to said massive heat sink means and said second thin layer of metal to said preformed apertured plate means substantially without disturbing said second thin layer of metal left exposed by the aperture in said preformed apertured plate means.
Claim 2
Independent Claim
128 words
The method of making an active high frequency semiconductor device including the steps of: forming first and second opposed substantially flat polished surfaces on diamond heat conducting means, coating said first and second polished surfaces, after cleaning, with respective first and second thin layers of metal having high electrical and thermal conductivities, placing said first thin layer of metal against massive heat sink means, placing preformed apertured plate means against said second thin layer of metal, and simultaneously bonding under heat and pressure said first thin layer of metal to said massive heat sink means and said second thin layer of metal to said preformed apertured plate means substantially without disturbing said second thin layer of metal left exposed by the aperture in said preformed apertured plate means.
Claim 3
Dependent Claim
65 words
The method described in claim 1 in which the step of coating said first and seconD polished surfaces with respective first and second thin layers of metal includes the sub-steps of: forming first and second thin layers of chromium on said respective first and second surfaces, and forming first and second thin layers of gold on said respective first and second thin layers of chromium.
Claim 4
Dependent Claim
37 words
The method described in claim 1 further including the additional step of thermal compression bonding of said active semiconductor device substantially concentrically within said aperture to said second thin layer of metal left exposed within said aperture.
Claim 5
Dependent Claim
31 words
The method described in claim 3 further including the additional step of bonding high frequency electrical conductor means to said preformed apertured plate means and to said massive heat sink means.
Claim 6
Dependent Claim
29 words
The method described in claim 4 further including the additional step of affixing bias power conductive means to said active semiconductor device opposite said second thin layer of metal.
References Cited (Backward Citations)
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US3419763A
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US3483096A
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US3729820A
Cited
US3678995A
Cited
US3702975A
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US3769702A
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US3761783A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-12-01 | 1979-06-02 | 1979-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-12-01 | 1983-06-02 | 1983-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-12-01 | 1987-06-02 | 1987-12-02 | $7700.00 | Window Closed / Lapsed |