Semiconductor device

Abstract

Abstract PURPOSE:To increase the mobility of carriers for enabling a semiconductor device to operate at high speed and to make chemical characteristics uniform for stabilizing characteristics of the device, by constructing a transist region of carriers into a superlattice structure with respect to mass numbers and by forming semiconductor thin films of isotopic structures with respect to each other. CONSTITUTION:Compound semiconductor thin films 1 containing an element of a small mass number are provided in a superlattice semiconductor layer 3 for providing a carrier transit region on a substrate 11, a semi-insulating GaAs substrate for example, and a thickness d1 of each thin film 1 is selected so as to meet d1<=pip/mVs wherein Vs represents a saturation speed of electrons, m represents an effective mass of electrons, p represents h/2pi and h represents a Planck's constant. Compound semiconductor thin films 2 containing an isotopic element of a large mass number are also provided in the superlattice semiconductor layer 3 while a thickness d2 thereof is selected so as to be smaller than several atom layers. The compound semiconductor thin films 1 and 12 are epitaxially deposited alternately. These films may be formed sequentially by the MBE process. A Schottky gate electrode G is formed thereon and source and drain electrodes S and D are ohmically adhered on the opposite sides thereof. Thus, a Schottky gate type FET can be provided.

Inventors

• 👤 Akira Ishibashi
• 👤 晃 石橋

Bibliographic Details