US6362017B1
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Light-emitting semiconductor device using gallium nitride group compound
Assignee: Nagoya University
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Filing: 2000-06-02
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Granted: 2002-03-26
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Expires: 2020-06-02
Abstract
Abstract Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al x Ga 1−x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al x Ga 1−x N) is of double-layer structure including an n-layer of low carrier concentration and an n + -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al x Ga 1−x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al x Ga 1−x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
Inventors
- 👤 Katsuhide Manabe
- 👤 Akira Mabuchi
- 👤 Hisaki Kato
- 👤 Michinari Sassa
- 👤 Norikatsu Koide
- 👤 Shiro Yamazaki
- 👤 Masafumi Hashimoto
- 👤 Isamu Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:38
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/8215
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
121 words
A method for producing a gallium nitride compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor having a wurtzite-type crystal structure from an organometallic compound by vapor phase epitaxy on said buffer layer on said single crystal sapphire substrate; and in said step of producing said semiconductor controlling a mixing ratio during said vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form an n-type layer of a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 and having a resistively ranging from 3×10 −1 Ωcm to 8×10 −3 Ωcm.
Claim 2
Independent Claim
121 words
A method for producing a gallium nitride compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor having a wurtzite-type crystal structure from an organometallic compound by vapor phase epitaxy on said buffer layer on said single crystal sapphire substrate; and in said step of producing said semiconductor controlling a mixing ratio during said vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form an n-type layer of a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 and having a resistively ranging from 3×10 −1 Ωcm to 8×10 −3 Ωcm.
Claim 3
Independent Claim
147 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor device having a wurtzite-type crystal structure from an organometallic compound by said vapor phase epitaxy on said buffer layer formed on said single crystal sapphire substrate; and in said step of producing said semiconductor device, controlling a mixing ratio in a process of vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form an n-type layer of a gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 and having a carrier concentration not less than 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 4
Independent Claim
147 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor device having a wurtzite-type crystal structure from an organometallic compound by said vapor phase epitaxy on said buffer layer formed on said single crystal sapphire substrate; and in said step of producing said semiconductor device, controlling a mixing ratio in a process of vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form an n-type layer of a gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 and having a carrier concentration not less than 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 5
Dependent Claim
37 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1, according to claim 1 , wherein said resistivity is ranging from 3×10 −1 Ω-cm to 8−10 −3 Ω-cm.
Claim 6
Dependent Claim
56 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1, according to claim 2 , wherein said carrier concentration is ranging from 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 7
Dependent Claim
32 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 1 , wherein said n-type layer is made of GaN.
Claim 8
Dependent Claim
32 words
A method for producing a gallium nitridge group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 2 , wherein said n-type layer is made of GaN.
Claim 9
Dependent Claim
47 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 2 , wherein said n-type layer is made of GaN.
Claim 10
Dependent Claim
47 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 4 , wherein said n-type layer is made of GaN.
Claim 11
Dependent Claim
55 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N,0≦x≦1 according to claim 1 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 12
Dependent Claim
71 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitridge group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 2 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 13
Dependent Claim
55 words
A method for producing a gallium nitride group semiconducor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 3 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 14
Dependent Claim
71 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 4 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 15
Dependent Claim
56 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 5 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 16
Dependent Claim
56 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 accoridng to claim 6 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 17
Dependent Claim
71 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 7 , wherein said buffer layer is formed on said sapphire substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 18
Dependent Claim
71 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layre of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 accoridng to claim 8 , wherein said buffer layer is formed on said sapphires substrate by using an organometallic compound vapor phase epitaxy at a growth temperature lower than that of said gallium nitride group compound semiconductor.
Claim 19
Dependent Claim
32 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 1 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 20
Dependent Claim
47 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 2 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 21
Dependent Claim
32 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 2 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 22
Dependent Claim
47 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 4 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 23
Dependent Claim
32 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 5 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 24
Dependent Claim
32 words
A method for producing a gallium nitride group compound semiconductor satisfying the formula Al x Ga 1−x N, 0≦x≦1 according too claim 6 , wherein silicon-containing gas is silane (SiH 4 ).
Claim 25
Dependent Claim
52 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 7 , wherein said electron concentration is not less than 6×10 16 /cm 3 .
Claim 26
Dependent Claim
52 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride group compound satisfying the formula Al x Ga 1−x N, 0≦x≦1 according to claim 8 , wherein said electron concentration is not less than 6×10 16 /cm 3 .
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