US5079184A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing iii-iv group compound semiconductor device
Assignee: Toshiba Corp
•
Filing: 1990-06-15
•
Granted: 1992-01-07
•
Expires: 2010-06-15
Abstract
Abstract A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Inventors
- 👤 Ako Hatano
- 👤 Toshihide Izumiya
- 👤 Yasuo Ohba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:52
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/227; H01S5/2275; H01S5/305; H01S5/3054; H01S5/3063; H01S5/32308; H01S5/32325; H01S5/32391; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918; Y10S438/925
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
52 words
In a method of manufacturing a III-V Group compound semiconductor device, including the step of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, the improvement comprises using an adduct of an organic metal compound containing magnesium with another compound as a doping source of magnesium.
Claim 2
Dependent Claim
52 words
In a method of manufacturing a III-V Group compound semiconductor device, including the step of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, the improvement comprises using an adduct of an organic metal compound containing magnesium with another compound as a doping source of magnesium.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein said another compound is an organic compound containing a Group III or Group V element, other than magnesium.
Claim 4
Dependent Claim
30 words
The method according to claim 1, wherein said adduct is represented by a formula: Mg(E(R).sub.4).sub.2 where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 5
Dependent Claim
19 words
The method according to claim 3, wherein each R is an alkyl group having 1 to 4 carbon atoms.
Claim 6
Dependent Claim
13 words
The method according to claim 4, wherein each R is a methyl group.
Claim 7
Dependent Claim
30 words
The method according to claim 1, wherein said adduct is represented by a formula: RMg(E(R).sub.4) where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 8
Dependent Claim
19 words
The method according to claim 6, wherein each R is an alkyl group having 1 to 4 carbon atoms.
Claim 9
Dependent Claim
27 words
The method according to claim 1, wherein trimethyl gallium, triethylgallium, trimethylaluminum, triethylaluminum, trimethylboron, triethylboron, diborane, or trimethylindium is used as a source of the Group III element.
Claim 10
Dependent Claim
22 words
The method according to claim 1, wherein phosphine, arsine, ammonia, or hydrazine is used as a source of the Group V element.
Claim 11
Dependent Claim
26 words
The method according to claim 1, wherein said formation of the p-type compound semiconductor layer is conducted at a reduced pressure of 25 to 300 Torr.
Claim 12
Dependent Claim
25 words
The method according to claim 1, wherein said formation of the p-type compound semiconductor layer is conducted at a temperature of 500° to 1150° C.
Claim 13
Dependent Claim
26 words
The method according to claim 11, wherein said formation of a p-type compound semiconductor layer is conducted at a temperature of not more than 650° C.
Claim 14
Independent Claim
63 words
A method of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, comprising reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Claim 15
Independent Claim
63 words
A method of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, comprising reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Claim 16
Dependent Claim
25 words
The method according to claim 13, wherein said another compound is an organic compound containing a Group III or Group V element, other than magnesium.
Claim 17
Dependent Claim
30 words
The method according to claim 13, wherein said adduct is represented by a formula: Mg(E(R).sub.4).sub.2 where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 18
Dependent Claim
19 words
The method according to claim 15, wherein each R is an alkyl group having 1 to 4 carbon atoms.
Claim 19
Dependent Claim
13 words
The method according to claim 16, wherein each R is a methyl group.
Claim 20
Dependent Claim
30 words
The method according to claim 13, wherein said adduct is represented by a formula: RMg(E(R).sub.4) where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 21
Dependent Claim
19 words
The method according to claim 18, wherein each R is an alkyl group having 1 to 4 carbon atoms.
Claim 22
Dependent Claim
27 words
The method according to claim 13, wherein trimethyl gallium, triethylgallium, trimethylaluminum, triethylaluminum, trimethylboron, triethylboron, diborane, or trimethylindium is used as said compound of the Group III element.
Claim 23
Dependent Claim
22 words
The method according to claim 13, wherein phosphine, arsine, ammonia, or hydrazine is used as said compound of the Group V element.
Claim 24
Dependent Claim
21 words
The method according to claim 13, wherein said reaction layer is conducted at a reduced pressure of 25 to 300 Torr.
Claim 25
Dependent Claim
19 words
The method according to claim 13, wherein said reaction is conducted at a temperature of 500° to 1150° C.
Claim 26
Dependent Claim
20 words
The method according to claim 23, wherein said reaction is conducted at a temperature of not more than 650° C.
References Cited (Backward Citations)
US3492175A
Cited
US4214926A
Cited
US4193835A
Cited
WO1984003995A1
Cited
EP0141561A2
Cited
US4716130A
Cited
US4734514A
Cited
US4782034A
Cited
US5015747A
Cited
US4916088A
Cited
US4904616A
Cited
US4965222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |