EP0141561A2
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EP
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A process for producing devices having semi-insulating indium phosphide based compositions
Assignee: AT&T Inc
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Filing: 1984-10-15
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Granted: —
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Expires: 2004-10-15
Abstract
Abstract This invention concerns a method for producing devices having semi-insulating indium phosphide-based materials, such as lasers, single or in an array, field effect transistors, and integrated optoelectronic circuits. The inventors have found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1 x 10 9 ohm-cm have been achieved as compared to resistivities on the order of 5 x 10 3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
Inventors
- 👤 Wilbur Dexter Johnston, Jr.
- 👤 Judith Ann Long
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 00:13
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A process for producing a device comprising the steps of 1) forming a region of semi-insulating indium phosphide-based material by contacting a substrate (5) with a deposition gas stream and 2) forming the active region of the device, CHARACTERIZED IN THAT the semi-insulating region is formed by introducing a dopant precursor comprising a ferrocene based composition, an iron pentacarbonyl based composition or a mixture thereof into the deposition gas stream, and the deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus.
Claim 2
Dependent Claim
89 words
A process for producing a device comprising the steps of 1) forming a region of semi-insulating indium phosphide-based material by contacting a substrate (5) with a deposition gas stream and 2) forming the active region of the device, CHARACTERIZED IN THAT the semi-insulating region is formed by introducing a dopant precursor comprising a ferrocene based composition, an iron pentacarbonyl based composition or a mixture thereof into the deposition gas stream, and the deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus.
Claim 3
Dependent Claim
44 words
A process according to claim 1 CHARACTERIZED IN THAT the iron pentacarbonyl based composition comprises butadiene iron tricarbonyl, cyclooctatetraene iron tricarbonyl, 1,3-pentadiene iron tricarbonyl, cyclohexadiene iron tricarbonyl, cycloheptadiene iron tricarbonyl, cycloheptatriene iron tricarbonyl, cyclopentadienyl iron dicarbonyl dimer, methylcyclopentadienyl iron dicarbonyl dimer or iron pentacarbonyl.
Claim 4
Dependent Claim
25 words
A process according to claim 1 or claim 2 CHARACTERIZED IN THAT the ferrocene based composition comprises ferrocene, dimethyl ferrocene, vinyl ferrocene or butyl ferrocene.
Claim 5
Dependent Claim
17 words
A process according to claim 1, CHARACTERIZED IN THAT said dopant precursor comprises ferrocene or iron pentacarbonyl.
Claim 6
Dependent Claim
18 words
A process according to any of the preceding claims CHARACTERIZED IN THAT the source of phosphorus comprises phosphine.
Claim 7
Dependent Claim
18 words
A process according to any of the preceding claims CHARACTERIZED IN THAT the organo-indium compound is indium trialkyl.
Claim 8
Dependent Claim
15 words
A process according to claim 6, CHARACTERIZED IN THAT the indium trialkyl is trimethyl indium.
Claim 9
Dependent Claim
19 words
A process according to any of the preceding claims CHARACTERIZED IN THAT the indium phosphide-based material is indium phosphide.
Claim 10
Dependent Claim
22 words
A process according to any of the preceding claims CHARACTERIZED IN THAT the device comprises a laser or an integrated optoelectronic circuit.
Claim 11
Independent Claim
20 words
A device including a region of semi-insulating indium phosphide-based material CHARACTERIZED IN THAT the semi-insulating region is doped with iron.
Claim 12
Independent Claim
20 words
A device including a region of semi-insulating indium phosphide-based material CHARACTERIZED IN THAT the semi-insulating region is doped with iron.
Claim 13
Independent Claim
97 words
A device comprising a region of semi-insulating indium phosphide-based material and an active region formed by a process that comprises forming a region of a semi-insulating indium phosphide-based material by contacting a substrate with a deposition gas stream, and forming the active region of the device, CHARACTERIZED IN THAT the semi-insulating region is formed by introducing a dopant precursor comprising a ferrocene based composition, an iron pentacarbonyl based composition or a mixture thereof into said deposition gas stream wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus.
Claim 14
Independent Claim
97 words
A device comprising a region of semi-insulating indium phosphide-based material and an active region formed by a process that comprises forming a region of a semi-insulating indium phosphide-based material by contacting a substrate with a deposition gas stream, and forming the active region of the device, CHARACTERIZED IN THAT the semi-insulating region is formed by introducing a dopant precursor comprising a ferrocene based composition, an iron pentacarbonyl based composition or a mixture thereof into said deposition gas stream wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus.
References Cited (Backward Citations)
No citation records indexed.
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