US4193835A
Expired / Lapsed
US
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Method for growing semiconductor crystal
Assignee: Panasonic Holdings Corp
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Filing: 1977-10-05
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Granted: 1980-03-18
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Expires: 1997-10-05
Abstract
Abstract When a highly resistive GaAs film doped with a metal impurity such as Fe, Ni or Cr is epitaxially grown from the vapor phase, a metallocene of this metal impurity such as Fe(C 5 H 5 ) 2 , Cr(C 5 H 5 ) 2 or Ni(C 5 H 5 ) 2 or a derivative of this metallocene is employed as a starting material of this impurity. Even at room temperature or a temperature lower than room temperature a metallocene or a derivative thereof has such a high vapor pressure as to permit the epitaxial growth of a semi-insulating film so that heating of a line for feeding an impurity into a reaction tube may be eliminated and consequently an epitaxial system may be much simplified. Furthermore introduction of the impurity into the reaction tube may be instantaneously started or stopped by opening or closing a stop valve inserted into the feed line so that the impurity distribution may be sharply changed from one semi-insulating epitaxially grown film to another.
Inventors
- 👤 Morio Inoue
- 👤 Kunio Itoh
- 👤 Kunihiko Asahi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:12
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C16/22; C23C16/30; C23C16/301; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/02; C30B29/06; C30B29/10; C30B29/40; C30B29/42; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3446; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
61 words
A vapor phase epitaxial method for growing a semiconductor crystal comprising employing a reaction gas containing the same elements as the major elements in a semiconductor substrate and a chemical compound containing a dicyclopentadienyl metal, or derivative thereof, of a metal element to be added or doped into said semiconductor substrate, adding or doping said metal element into said semiconductor substrate.
Claim 2
Dependent Claim
61 words
A vapor phase epitaxial method for growing a semiconductor crystal comprising employing a reaction gas containing the same elements as the major elements in a semiconductor substrate and a chemical compound containing a dicyclopentadienyl metal, or derivative thereof, of a metal element to be added or doped into said semiconductor substrate, adding or doping said metal element into said semiconductor substrate.
Claim 3
Dependent Claim
48 words
A method as set forth in claim 1, wherein said dicyclopentadienyl metal is Fe(C 5 H 5 ) 2 , Cr(C 5 H 5 ) 2 , Ni(C 5 H 5 ) 2 , Mo(C 5 H 5 ) 2 or Mn(C 5 H 5 ) 2 .
Claim 4
Dependent Claim
19 words
A method as set forth in claim 1, wherein said semiconductor substrate is GaAs, Si, CdS, InP or PbSe.
Claim 5
Dependent Claim
117 words
A vapor decomposition process for growing a semiconductor crystal comprising employing a reaction gas containing the same elements as the major elements contained in a semiconductor crystal substrate, a gaseous dicyclopentadienyl metal or derivative thereof containing a metal element to be added to or doped into said semiconductor crystal and a carrier gas or gases for transporting said reaction gas and said gaseous dicyclopentadienyl metal; maintaining the concentration of said dicyclopentadienyl metal in the range between 5 ppm and 10 3 ppm based on the weight of said carrier gas or gases and the reaction temperature within the range between 600° C. and 800° C. and then adding or doping said metal element into said semiconductor substrate.
Claim 6
Dependent Claim
117 words
A vapor decomposition process for growing a semiconductor crystal comprising employing a reaction gas containing the same elements as the major elements contained in a semiconductor crystal substrate, a gaseous dicyclopentadienyl metal or derivative thereof containing a metal element to be added to or doped into said semiconductor crystal and a carrier gas or gases for transporting said reaction gas and said gaseous dicyclopentadienyl metal; maintaining the concentration of said dicyclopentadienyl metal in the range between 5 ppm and 10 3 ppm based on the weight of said carrier gas or gases and the reaction temperature within the range between 600° C. and 800° C. and then adding or doping said metal element into said semiconductor substrate.
Claim 7
Dependent Claim
20 words
A process as set forth in claim 4, wherein said carrier gas is hydrogen, and said dicyclopentadienyl metal is ferrocene.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-18 | 1983-09-17 | 1984-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-18 | 1987-09-17 | 1988-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-18 | 1991-09-17 | 1992-03-18 | $7700.00 | Window Closed / Lapsed |