US4716130A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOCVD of semi-insulating indium phosphide based compositions
Assignee: Nokia Bell Labs
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Filing: 1986-02-20
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Granted: 1987-12-29
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Expires: 2006-02-20
Abstract
Abstract It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1×10 9 ohm-cm have been achieved as compared to resistivities on the order of 5×10 3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
Inventors
- 👤 Wilbur D. Johnston, Jr.
- 👤 Judith A. Long
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:10
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
125 words
A process for producing a device comprising the steps of (1) forming a region of a semi-insulating indium phosphide-based material by contacting a substrate with a deposition gas stream and (2) forming the active region of said device CHARACTERIZED IN THAT said semi-insulating region is formed by introducing a dopant precursor comprising a composition chosen from the group consisting of ferrocene based compositions and iron pentacarbonyl based compositions into said deposition gas stream, wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus wherein the mole ratio of iron to indium in said gas stream is less than 1.2×10 -4 , and whereby said semi-insulating indium phosphide has a resistivity of at least 10 6 ohm-cm.
Claim 2
Dependent Claim
125 words
A process for producing a device comprising the steps of (1) forming a region of a semi-insulating indium phosphide-based material by contacting a substrate with a deposition gas stream and (2) forming the active region of said device CHARACTERIZED IN THAT said semi-insulating region is formed by introducing a dopant precursor comprising a composition chosen from the group consisting of ferrocene based compositions and iron pentacarbonyl based compositions into said deposition gas stream, wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus wherein the mole ratio of iron to indium in said gas stream is less than 1.2×10 -4 , and whereby said semi-insulating indium phosphide has a resistivity of at least 10 6 ohm-cm.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said source of phosphorus comprises phosphine.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said organo-indium compound comprises indium trialkyl.
Claim 5
Dependent Claim
12 words
The process of claim 3 wherein said indium trialkyl comprises trimethyl indium.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said organo-indium compound comprises an indium trialkyl.
Claim 7
Dependent Claim
12 words
The process of claim 5 wherein said indium trialkyl comprises trimethyl indium.
Claim 8
Dependent Claim
13 words
The process of claim 1 wherein said indium phosphide-based material comprises indium phosphide.
Claim 9
Dependent Claim
11 words
The process of claim 1 wherein said device comprises a laser.
Claim 10
Dependent Claim
13 words
The process of claim 1 wherein said device comprises a field effect transistor.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein said device comprises an array of lasers.
Claim 12
Dependent Claim
13 words
The process of claim 1 wherein said device comprises an integrated optoelectronic circuit.
Claim 13
Dependent Claim
47 words
The process of claim 1 wherein said iron pentacarbonyl based composition comprises a composition chosen from the group consisting of butadiene iron tricarbonyl, cyclooctatetraene iron tricarbonyl, 1,3-pentadiene iron tricarbonyl cyclohexadiene iron tricarbonyl, cycloheptadiene iron tricarbonyl, cycloheptatriene iron tricarbonyl, cyclopentadienyl iron dicarbonyl dimer, and methylcyclopentadienyl iron dicarbonyl dimer.
Claim 14
Dependent Claim
26 words
The process of claim 1 wherein said ferrocene based composition comprises a composition chosen from the group consisting of dimethyl ferrocene, vinyl ferrocene, and butyl ferrocene.
Claim 15
Dependent Claim
22 words
The process of claim 1 wherein said dopant precursor comprises a composition chosen from the group consisting of ferrocene and iron pentacarbonyl.
Claim 16
Dependent Claim
12 words
The process of claim 14 wherein said source of phosphorus comprises phosphine.
Claim 17
Dependent Claim
12 words
The process of claim 15 wherein said organo-indium compound comprises indium trialkyl.
Claim 18
Dependent Claim
12 words
The process of claim 16 wherein said indium trialkyl comprises trimethyl indium.
Claim 19
Dependent Claim
13 words
The process of claim 14 wherein said organo-indium compound comprises an indium trialkyl.
Claim 20
Dependent Claim
12 words
The process of claim 18 wherein said indium trialkyl comprises trimethyl indium.
Claim 21
Dependent Claim
13 words
The process of claim 14 wherein said indium phosphide-based material comprises indium phosphide.
Claim 22
Dependent Claim
11 words
The process of claim 14 wherein said device comprises a laser.
Claim 23
Dependent Claim
13 words
The process of claim 14 wherein said device comprises a field effect transistor.
Claim 24
Dependent Claim
13 words
The process of claim 14 wherein said device comprises an array of lasers.
Claim 25
Dependent Claim
13 words
The process of claim 14 wherein said device comprises an integrated optoelectronic circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-12-28 | 1991-06-29 | 1991-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-28 | 1995-06-29 | 1995-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-28 | 1999-06-29 | 1999-12-29 | $7700.00 | Window Closed / Lapsed |