US4214926A
Expired / Lapsed
US
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Method of doping IIb or VIb group elements into a boron phosphide semiconductor
Assignee: TDK Corp
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Filing: 1978-12-20
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Granted: 1980-07-29
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Expires: 1998-12-20
Abstract
Abstract A method of doping IIb or VIb group elements into a phosphide semiconductor comprising the steps of adding organic compounds of IIb group elements or hydrides of VIb group elements to a gas containing boron compounds selected from the group consisting of boron hydrides and boron halides and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides, in a ratio of 0.05-50 mol of said IIb group organic compounds or 10-4-10 mol of said VIb group hydrides per mol of said boron compounds, and conducting vapor phase growing of the boron phosphide semiconductor at a growing temperature between about 850 DEG and 1100 DEG C.
Inventors
- 👤 Nagano Katsuto
- 👤 Sasa Syozo
- 👤 Nakada Takeshi
- 👤 Asakawa Yukio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:10
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/11; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
125 words
A method of doping IIb group elements into a boron phosphide semiconductor on a single crystal silicon substrate comprising heating the substrate at a temperature between about 850° C. and 1100° C.; passing a gas containing boron compounds selected from the group consisting of boron hydrides and boron halides, and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides into contact with said substrate; adding organic compounds of IIb group elements to said gas, the mol ratio of said IIb group organic compounds to said boron compounds being about 5.0, said IIb group organic compounds having the general formula: ##STR2## wherein M is zinc, cadmium or mercury, R is a hydrocarbon radical, and R' is halogen or the same as R.
Claim 2
Independent Claim
125 words
A method of doping IIb group elements into a boron phosphide semiconductor on a single crystal silicon substrate comprising heating the substrate at a temperature between about 850° C. and 1100° C.; passing a gas containing boron compounds selected from the group consisting of boron hydrides and boron halides, and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides into contact with said substrate; adding organic compounds of IIb group elements to said gas, the mol ratio of said IIb group organic compounds to said boron compounds being about 5.0, said IIb group organic compounds having the general formula: ##STR2## wherein M is zinc, cadmium or mercury, R is a hydrocarbon radical, and R' is halogen or the same as R.
Claim 3
Dependent Claim
39 words
A method as defined in claim 1, wherein said boron compound is diborane, the phosphorus compound is phosphine with a PH 3 /B 2 H 6 mol ratio of about 1:50, and said IIb group organic compound is diethylzinc.
Claim 4
Dependent Claim
39 words
A method as defined in claim 1, wherein said boron compound is diborane, the phosphorus compound is phosphine with a PH 3 /B 2 H 6 mol ratio of about 1:50, and said IIb group organic compound is diethylcadmium.
Claim 5
Dependent Claim
44 words
A method as defined in claim 1, wherein said boron compound is B 2 H 6 , the phosphorus compound is PCl 3 with a PCl 3 /B 2 H 6 mol ratio of about 1:25, and said IIb group organic compound is diethylzinc.
Claim 6
Independent Claim
123 words
A method of doping VIb group elements into a boron phosphide semiconductor on a single crystal silicon substrate which comprises heating the substrate at a temperature between about 850° C. and 1100° C., passing a gas containing borom compounds selected from the group consisting of boron hydrides and boron halides, and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides in contact with said substrate, adding hydrides of VIb group elements diluted with H 2 to said gas, the mol ratio of said VIb hydrides to said boron compounds being between about 0.067 and 0.67 wherein said hydrides of VIb group elements are selected from the group consisting of H 2 S, H 2 Se or H 2 Te.
Claim 7
Independent Claim
123 words
A method of doping VIb group elements into a boron phosphide semiconductor on a single crystal silicon substrate which comprises heating the substrate at a temperature between about 850° C. and 1100° C., passing a gas containing borom compounds selected from the group consisting of boron hydrides and boron halides, and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides in contact with said substrate, adding hydrides of VIb group elements diluted with H 2 to said gas, the mol ratio of said VIb hydrides to said boron compounds being between about 0.067 and 0.67 wherein said hydrides of VIb group elements are selected from the group consisting of H 2 S, H 2 Se or H 2 Te.
Claim 8
Dependent Claim
31 words
A method as defined in claim 5, wherein said boron compound is diborane, the phosphorus compound is phosphine and the PH 3 /B 2 H 6 mol ratio is about 1:50.
Claim 9
Dependent Claim
36 words
A method as defined in claim 5, wherein said boron compound is B 2 H 6 , the phosphorus compound is PCl 3 and the PCl 3 /B 2 H 6 mol ratio is approximately 1:25.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-29 | 1984-01-28 | 1984-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-29 | 1988-01-28 | 1988-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-29 | 1992-01-28 | 1992-07-29 | $7700.00 | Window Closed / Lapsed |