US3877060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an insulating layer of boron phosphide and method of making the same
Assignee: Sony Corp
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Filing: 1973-04-17
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Granted: 1975-04-08
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Expires: 1993-04-17
Abstract
Abstract A semiconductor device having an insulating layer made of boron phosphide which is epitaxially deposited on a silicon substrate as a first layer. A silicon layer is epitaxially deposited on the first epitaxial layer as a second layer. In this case, integrated circuits are formed in the second epitaxial layer the electronic elements of which are electrically isolated with one another and the second epitaxial layer is also electrically isolated from the silicon substrate by the first epitaxial layer made of boron phosphide which shows high electrical resistance. Further, a method of fabricating a semiconductor device having a step of depositing an epitaxial layer of boron phosphide on a silicon substrate.
Inventors
- 👤 Katsufusa Shono
- 👤 Mitsuharu Takikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3258; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/051; Y10S148/059; Y10S148/065; Y10S148/072; Y10S148/085; Y10S148/113; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
63 words
A SEMICONDUCTOR DEVICE COMPRISING: A MONOCRYSTALLINE SILICON SUBSTRATE; A FIRST EPITAXIAL LAYER OF UNDOPED BORON PHOSPHIDE ON ONE SURFACE OF SAID SUBSTRATE AND HAVING A RESISTIVITY GREATER THAN 10**4 OHMS-CM; AND A SECOND EPITAXIAL LAYER OF SILICON ON SAID FIRST EPITAXIAL LAYER, SAID BORON PHOSPHIDE LAYER HAVING A HEXAGONAL LATTICE STRUCTURE AND SAID BORON PHOSPHIDE LAYER SERVING AS AN ISOLATION NON-ELECTRICAL CONDUCTING AREA.
Claim 2
Dependent Claim
63 words
A SEMICONDUCTOR DEVICE COMPRISING: A MONOCRYSTALLINE SILICON SUBSTRATE; A FIRST EPITAXIAL LAYER OF UNDOPED BORON PHOSPHIDE ON ONE SURFACE OF SAID SUBSTRATE AND HAVING A RESISTIVITY GREATER THAN 10**4 OHMS-CM; AND A SECOND EPITAXIAL LAYER OF SILICON ON SAID FIRST EPITAXIAL LAYER, SAID BORON PHOSPHIDE LAYER HAVING A HEXAGONAL LATTICE STRUCTURE AND SAID BORON PHOSPHIDE LAYER SERVING AS AN ISOLATION NON-ELECTRICAL CONDUCTING AREA.
Claim 3
Dependent Claim
51 words
A semiconductor device as set forth in claim 1, in which the relationship between the orientation of the crystals of said first and second layers is that when the substrate has a (111) face and the direction 110!, said boron phosphide layer has a (1010) face and the direction 0001! .
Claim 4
Dependent Claim
50 words
A semiconductor device as set forth in claim 1, in which the relationship between the orientation of the crystals of said first and second layers is that when the substrate has a (100) face and the direction 100!, said first layer has a (1120) face and the direction 1101! .
Claim 5
Dependent Claim
38 words
A semiconductor device as set forth in claim 1, in which the boron phosphide of said first epitaxial layer has a lattice constant a of 6.19A and a constant c of 12.25A and a forbidden gap of 6eV.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-07 | 1978-10-07 | 1979-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-07 | 1982-10-07 | 1983-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-07 | 1986-10-07 | 1987-04-08 | $7700.00 | Window Closed / Lapsed |