US4608581A
Expired / Lapsed
US
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Semiconductor light emitter based on gallium nitride and process for manufacture thereof
Assignee: Individual
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Filing: 1983-09-01
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Granted: 1986-08-26
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Expires: 2003-09-01
Abstract
Abstract The semiconductor light emitter comprises a substrate (I) from a single-crystalline material transparent within the visible range of spectrum. Onto the substrate (I) there are deposited: a layer (2) of gallium nitride of the n-type conductivity and, above it, a layer (3) of gallium nitride alloyed with acceptor dopes. The emitter also comprises two metallic electrodes (5) and (6). Onto the electrode (5) a negative-polarity voltage is applied, onto the electrode (6)--a positive-polarity voltage. According to the present invention, over the layer (3) of gallium nitride alloyed with acceptor dopes a layer (4) of an insulating material is formed. The process for manufacturing the semiconductor light emitter comprises epitaxially growing, on a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of the n-type conductivity; epitaxially growing, on this layer, a layer of gallium nitride alloyed by acceptor dopes, and forming two electrodes. According to the present invention, prior to the formation of the metallic electrodes on the layer of gallium nitride alloyed by acceptor dopes a layer of an insulating material is formed.
Inventors
- 👤 Givi D. Bagratishvili
- 👤 Rusudan B. Dzhanelidze
- 👤 Vladimir V. Zorikov
- 👤 Vissarion M. Mikhelashvili
- 👤 Iosif E. Pekar
- 👤 Rafael I. Chikovani
- 👤 Manana A. Chkhaidze
- 👤 Svetlana Z. Akopova
- 👤 Viktor B. Bogdanovich
- 👤 Sergei V. Svechnikov
- 👤 Revaz A. Charmakadze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/84; H10H20/034; H10H20/83; H10H20/831; H10H20/8314
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
140 words
A semiconductor light emitter based on gallium nitride comprising a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of n-type conductivity deposited on said single crystalline material, an overlapping layer of gallium nitride alloyed with acceptor dopes, and two metallic electrodes, one of which is supplied with a negative-polarity voltage and the other is supplied with a positive-polarity voltage, characterized by an insulating layer means for limiting the flow of large currents through low-ohmic regions of the layer of gallium nitride alloyed by acceptor dopes by providing complete insulation of the layer of gallium nitride alloyed by acceptor dopes low-ohmic regions of the layer of gallium nitride alloyed by acceptor, the insulating layer means including a layer of insulating material formed over the layer of gallium nitride alloyed by acceptor dopes.
Claim 2
Dependent Claim
140 words
A semiconductor light emitter based on gallium nitride comprising a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of n-type conductivity deposited on said single crystalline material, an overlapping layer of gallium nitride alloyed with acceptor dopes, and two metallic electrodes, one of which is supplied with a negative-polarity voltage and the other is supplied with a positive-polarity voltage, characterized by an insulating layer means for limiting the flow of large currents through low-ohmic regions of the layer of gallium nitride alloyed by acceptor dopes by providing complete insulation of the layer of gallium nitride alloyed by acceptor dopes low-ohmic regions of the layer of gallium nitride alloyed by acceptor, the insulating layer means including a layer of insulating material formed over the layer of gallium nitride alloyed by acceptor dopes.
Claim 3
Dependent Claim
17 words
A semiconductor light emitter according to claim 1, characterized in that the insulating layer means comprises alumina.
Claim 4
Dependent Claim
19 words
A semiconductor light emitter according to claim 1, characterized in that the insulating layer means comprises gallium nitride oxide.
Claim 5
Dependent Claim
28 words
A semiconductor light emitter according to any one of the insulating foregoing claims 1 to 3, characterized in that on the layer of both metallic electrodes are formed.
Claim 6
Dependent Claim
51 words
A semiconductor light emitter according to any one of the foregoing claims 1 to 3, characterized in that on the insulating layer means a metallic electrode is formed onto which a negative-polarity voltage is applied and the other electrode is formed on the layer of gallium nitride alloyed with acceptor dopes.
Claim 7
Dependent Claim
90 words
A process for the manufacture of a semi-conductor light emitter according to claim 1, comprising the steps of epitaxially growing, on a substrate from a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of n-type conductivity, epitaxially growing on said layer, a layer of gallium nitride alloyed by acceptor dopes, and forming two metallic electrodes, characterized by a step of forming an insulating layer means on the layer of gallium nitride alloyed by acceptor dopes prior to said step of forming the metallic electrodes.
Claim 8
Dependent Claim
34 words
A process according to claim 6, characterized by forming the insulating layer means by electrochemical deposition of aluminium in an electrolyte containing a salt of aluminium, followed by anodic oxidation of the deposited aluminium.
Claim 9
Dependent Claim
27 words
A process according to claim 6, characterized by forming insulating layer means by an anodic oxidation of the layer of gallium nitride alloyed by said acceptor dopes.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-08-25 | 1990-02-24 | 1990-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-25 | 1994-02-24 | 1994-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-25 | 1998-02-24 | 1998-08-26 | $7700.00 | Window Closed / Lapsed |