US4396929A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium nitride light-emitting element and method of manufacturing the same
Assignee: Panasonic Holdings Corp
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Filing: 1980-10-20
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Granted: 1983-08-02
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Expires: 2000-10-20
Abstract
Abstract The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
Inventors
- 👤 Yoshimasa Ohki
- 👤 Yukio Toyoda
- 👤 Hiroyuki Kobayashi
- 👤 Isamu Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/817; H10H20/818; H10H20/01; H10H20/032; H10H20/83; H10H20/831; H10H20/8312; H10H20/85; H10H20/857; H10W; H10W90/00; H10W90/701; H10W90/721; H10W90/726
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
169 words
A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating galluim nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer.
Claim 2
Dependent Claim
169 words
A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating galluim nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer.
Claim 3
Dependent Claim
17 words
A light-emitting diode chip as claimed in claim 1, wherein said rough area is an undulatory portion.
Claim 4
Dependent Claim
25 words
A light-emitting diode chip as claimed in claim 1, wherein said rough area comprises one groove or more made on the surface of said substrate.
Claim 5
Dependent Claim
17 words
A light-emitting diode chip as claimed in claim 1, wherein said rough area has a strip-like shape.
Claim 6
Dependent Claim
167 words
A light-emitting diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conconductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer.
Claim 7
Dependent Claim
167 words
A light-emitting diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conconductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer.
Claim 8
Dependent Claim
27 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed along the peripheral portion of said light-emitting diode chip.
Claim 9
Dependent Claim
26 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed at a position surrounding by said semi-insulating layer.
Claim 10
Dependent Claim
24 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed between portions of said semi-insulating layer.
Claim 11
Dependent Claim
40 words
A light-emitting diode chip as claimed in claim 1 or 5, further comprising another high conductivity region formed integrally with said conductive gallium nitride layer, said another conductivity region being formed along the peripheral portion of said light-emitting diode chip.
Claim 12
Dependent Claim
21 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region comprises an irregularly grown layer.
Claim 13
Dependent Claim
19 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region comprises a polycrystalline.
Claim 14
Dependent Claim
19 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of a semiconductor.
Claim 15
Dependent Claim
20 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of an insulating material.
Claim 16
Dependent Claim
16 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is transparent.
Claim 17
Dependent Claim
18 words
A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of sapphire.
Claim 18
Dependent Claim
208 words
A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrode.
Claim 19
Dependent Claim
208 words
A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrode.
Claim 20
Dependent Claim
205 words
A light-emittng diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrodes.
Claim 21
Dependent Claim
205 words
A light-emittng diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrodes.
Claim 22
Dependent Claim
17 words
A light-emitting diode as claimed in claim 16 or 17, further comprising a packaging having a lens.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |