US5006908A
Expired / Lapsed
US
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Epitaxial Wurtzite growth structure for semiconductor light-emitting device
Assignee: NTT Inc
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Filing: 1990-02-12
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Granted: 1991-04-09
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Expires: 2010-02-12
Abstract
Abstract An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film.
Inventors
- 👤 Takashi Matsuoka
- 👤 Toru Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:07
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/3202; H01S5/32025; H01S5/323; H01S5/32308; H01S5/32341; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/817; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/36; H10P14/3602; H01S2304/00; H01S2304/04; H01S5/02; H01S5/0206; H01S5/0213; H01S5/022; H01S5/0233; H01S5/0234
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
38 words
An epitaxial growth structure for a semiconductor light-emitting device, comprising: a sapphire substrate having a substantially (0110) face (M face); and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate.
Claim 2
Dependent Claim
38 words
An epitaxial growth structure for a semiconductor light-emitting device, comprising: a sapphire substrate having a substantially (0110) face (M face); and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate.
Claim 3
Dependent Claim
22 words
A structure according to claim 1, wherein said single crystal film consists of In x Ga y Al 1-x-y N (0≦x≦1, 0≦x+y≦1).
Claim 4
Dependent Claim
21 words
A structure according to claim 2, wherein said single crystal film is epitaxially grown in a (0113)-axial direction on said substrate.
Claim 5
Dependent Claim
50 words
A semiconductor light-emitting device comprising: a sapphire substrate having a substantially (0110) face (M face); a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate; an insulating film formed on said single crystal film; and a metal electrode formed on said insulating film.
Claim 6
Dependent Claim
50 words
A semiconductor light-emitting device comprising: a sapphire substrate having a substantially (0110) face (M face); a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate; an insulating film formed on said single crystal film; and a metal electrode formed on said insulating film.
Claim 7
Dependent Claim
22 words
A device according to claim 4, wherein said single crystal film consists of In x Ga y Al 1-x-y N (0≦x≦1, 0≦x+y≦1).
Claim 8
Dependent Claim
21 words
A device according to claim 5, wherein said single crystal film is epitaxially grown in a <0113>-axial direction on said substrate.
Claim 9
Dependent Claim
57 words
A device according to claim 4, further comprising second and third wurtzite type Group III nitride mixed crystal semiconductor single crystal films arranged and epitaxially grown between said single crystal film and said insulating film, said second single crystal film having a smaller band gap energy than those of said single crystal films at both sides thereof.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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