JPS5223600A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method for making growth single crystal of gallium nitride
Assignee: Panasonic Holdings Corp
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Filing: 1975-08-19
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Granted: —
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Expires: 1995-08-19
Abstract
Abstract PURPOSE: To synthesize single crystal of gallium nitride which bears good electric characteristics and cohesion power to sapphire base. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Masaru Kazumura
- 👤 Morio Inoue
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-27 18:23
CPC Classifications
—
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References Cited (Backward Citations)
JPS5631320A
Cited
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