US4153905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light-emitting device
Assignee: Individual
•
Filing: 1978-03-28
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Granted: 1979-05-08
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Expires: 1998-03-28
Abstract
Abstract A semiconductor light-emitting device comprising a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on the substrate, and a layer of semiconductor-type aluminum nitride, deposited on the semiconductor gallium nitride layer and forming an injecting heterojunction therewith. The device emits bright blue light.
Inventors
- 👤 Revaz A. Charmakadze
- 👤 Rafael I. Chikovani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10S148/15
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
74 words
A semiconductor light-emitting device comprising: a sapphire substrate; an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on said substrate; a layer of semiconductor n-type aluminum nitride deposited on said semiconductor gallium nitride layer and forming therewith an injecting heterojunction ensuring emission toward said substrate; two electrodes whereto a bias voltage is applied; first said electrode being on said semiconductor gallium nitride layer; second said electrode being on said semiconductor aluminum nitride layer.
Claim 2
Dependent Claim
74 words
A semiconductor light-emitting device comprising: a sapphire substrate; an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on said substrate; a layer of semiconductor n-type aluminum nitride deposited on said semiconductor gallium nitride layer and forming therewith an injecting heterojunction ensuring emission toward said substrate; two electrodes whereto a bias voltage is applied; first said electrode being on said semiconductor gallium nitride layer; second said electrode being on said semiconductor aluminum nitride layer.
Claim 3
Dependent Claim
17 words
A semiconductor light-emitting device as claimed in claim 1, wherein said semiconductor gallium nitride layer is semi-insulating.
Claim 4
Dependent Claim
17 words
A semiconductor light-emitting device as claimed in claim 1, wherein said semiconductor aluminum nitride layer is semi-insulating.
Claim 5
Dependent Claim
17 words
A semiconductor light-emitting device as claimed in claim 2, wherein said semiconductor aluminum nitride layer is semi-insulating.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-07 | 1982-11-06 | 1983-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-07 | 1986-11-06 | 1987-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-07 | 1990-11-06 | 1991-05-08 | $7700.00 | Window Closed / Lapsed |