US4095331A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
Assignee: United States Department of the Air Force
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Filing: 1976-11-04
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Granted: 1978-06-20
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Expires: 1996-11-04
Abstract
Abstract An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.
Inventors
- 👤 Richard Frederick Rutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:00
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
88 words
A method of making a light emitting diode array comprising the steps of: sputtering aluminum nitride onto a sapphire substrate, placing said sapphire substrate in contact with a source material of aluminum nitride in a gaseous environment of a predetermined ratio, heating said sapphire substrate and said source material to a predetermined temperature, depositing said source material onto said sapphire substrate to a predetermined thickness to form a layered surface, and alloying a plurality of conductive dots onto the surface of said layered surface in a predetermined configuration.
Claim 2
Independent Claim
88 words
A method of making a light emitting diode array comprising the steps of: sputtering aluminum nitride onto a sapphire substrate, placing said sapphire substrate in contact with a source material of aluminum nitride in a gaseous environment of a predetermined ratio, heating said sapphire substrate and said source material to a predetermined temperature, depositing said source material onto said sapphire substrate to a predetermined thickness to form a layered surface, and alloying a plurality of conductive dots onto the surface of said layered surface in a predetermined configuration.
Claim 3
Dependent Claim
22 words
A method of making a light emitting diode array as recited in claim 1 wherein said gaseous environment comprises hydrogen and nitrogen.
Claim 4
Dependent Claim
24 words
A method of making a light emitting diode array as recited in claim 1 wherein said predetermined ratio comprises 90% hydrogen and 10% nitrogen.
Claim 5
Dependent Claim
21 words
A method of making a light emitting diode array as recited in claim 1 wherein said predetermined temperature equals 1800° C.
Claim 6
Dependent Claim
22 words
A method of making a light emitting diode array as recited in claim 1 wherein said source material comprises sintered aluminum nitride.
Claim 7
Dependent Claim
20 words
A method of making a light emitting diode array as recited in claim 1 wherein said conductive dots comprise aluminum.
References Cited (Backward Citations)
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Cited
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US3577285A
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US3660180A
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-19 | 1981-12-19 | 1982-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-19 | 1985-12-19 | 1986-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-19 | 1989-12-19 | 1990-06-20 | $7700.00 | Window Closed / Lapsed |