Constrainment of autodoping in epitaxial deposition

Claim 1

A method of fabricating semiconductor devices including the steps of: forming in a semiconductor substrate of a first conductivity type a diffused region of an opposite conductivity type with said region disposed adjacent a major surface of and spaced from the lateral edges of said substrate; sputtering, at a low temperature of the order of 500* C, over said surface in a substantially continuous extension of the crystal orientation of said substrate, a first cohesive layer of semiconductor material coextensive with said region and adjacent portions of said surface; and epitaxially growing a second cohesive layer of semiconductor material over and contiguous with said first layer wherein both said first and second layers comprise a semiconductor material of said first conductivity type.

Claim 2

A method of fabricating semiconductor devices including the steps of: forming in a semiconductor substrate of a first conductivity type a diffused region of an opposite conductivity type with said region disposed adjacent a major surface of and spaced from lateral edges of said substrate; sputtering, at a low temperature of the order of 500* C, over said surface in a substantially continuous extension of the crystal orientation of said substrate, a first cohesive layer of semiconductor material coextensive with said region and adjacent portions of said surface; and epitaxially growing a second cohesive layer of semiconductor material over and contiguous with said first layer wherein both said first and second layer comprise a semiconductor material of said opposite conductivity type.

Claim 3

A method of fabricating semiconductor devices including the steps of: forming through a major surface of a first conductivity type semiconductor substrate and spaced from the lateral edges thereof, a first diffused region of an opposite conductivity type; forming in said substrate through said surface and spaced from said first region a second diffused region of said first conductivity type having a resistance substantially less than said substrate; sputtering at a low temperature of the order of 500* C, on said substrate in a substantial continuous extension of the crystal orientation thereof, a first cohesive layer of semiconductor material coextensive with and overlying said first and second regions and adjacent portions of said surface; and epitaxially growing a second layer of semiconductor material over and contiguouS with said first layer, wherein said first and second layers comprise a semiconductor material of said first conductivity type.

Claim 4

A method of fabricating semiconductor devices including the steps of: forming through a major surface of a first conductivity type semiconductor substrate and spaced from the lateral edges thereof, a first diffused region of an opposite conductivity type; forming in said substrate through said surface and spaced from said first region a second diffused region of said first conductivity type having a resistance substantially less than said substrate; sputtering, at a low temperature of the order of 500* C, on said substrate in a substantial continuous extension of the crystal orientation thereof, a first cohesive layer of semiconductor material coextensive with and overlying said first and second regions and adjacent portions of said surface; and epitaxially growing a second layer of semiconductor material over and contiguous with said first layer, wherein said first and second layers comprise a semiconductor material of said opposite conductivity type.