Method for epitaxially growing silicon carbide onto a crystalline substrate

Abstract

Abstract EPITAXIAL GROWTH OF SEMICONDUCTIVE MATERIALS IS EFFECTED IN AN INERT ATMOSPHERE BY PHYSICALLY CONTACTING THE SURFACES OF A SOURCE OF SEMICONDUCTIVE MATERIAL TO PARTICULAR SUFACE AREAS OF A CRYSTALLINE SUBSTRATE ONTO WHICH SUCH SURFACE AREAS OF A CRYSTALLINE SUBSTRATE ONTO WHICH SUCH GROWTH IS TO BE EFFECTED. THE SOURCE IS HEATED TO A TEMPERATURE TO CAUSE RAPID VAPORIZATION OF THE SEMI-CONDUCTIVE MATERIAL; THE SUBSTRATE IS MAINTAINED AT A SLIGHTLY LOWER TEMPERATURE TO PROMOTE THE CONDENSATION AND EPITAXIAL GROWTH OF THE VAPORIZED SEMICONDUCTIVE MATERIAL ON THE CONTACTED SUBSTRATE SURFACES. THE SURFACE OF THE SOURCE CAN BE PREFORMED SO AS TO GROW PARTICULAR PATTERNS OF THE SEMICONDUCTIVE MATERIAL ONTO THE SUBSTRATE SURFACE. CONDUCTIVITY-TYPE DETERMINING IMPURITIES CAN BE INTRODUCED EITHER INTO THE INERT ATMOSPHERE OR BE PRESENT IN THE SOURCE SO AS TO IMPART A PARTICULAR CONDUCTIVITY TO THE GROWN SEMICONDUCTIVE MATERIAL.

Inventors

• 👤 Richard F Rutz

Bibliographic Details