Bipolar transistor

Abstract

Abstract PURPOSE:To realize a high-temperature operation at a high breakdown strength by using a new compound semiconductor material by providing the following on a semiconductor substrate: a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type which have been constituted of a superlattice layer where BP layers and Ga1-XAlXN (where 0<=x<=1) layers of a sphalerite type have been laminated alternately. CONSTITUTION:An undoped GaP layer 12 of 1mum is formed as a buffer layer on a semiinsulating GaP substrate 11; in addition, an undoped BP layer 13 of 1mum is formed as a buffer layer. An n-type GaAlN/BP layer 14 of 1.5mum as a collector layer, a p-type BP layer 15 of 0.2mum as a base layer and an n-type GaAlN/BP layer 16 of 1mum as an intrinsic emitter layer are laminated one after another on the BP layer 13; an n-type BP layer 17 of 0.5mum as a contact layer is formed on the n-type GaAlN/BP layer 16.

Inventors

• 👤 Gokou Hatano
• 👤 波多野　吾紅
• 👤 Toshihide Izumitani
• 👤 敏英 泉谷
• 👤 Yasuo Oba
• 👤 康夫 大場

Bibliographic Details