US5205905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching method for semiconductor
Assignee: Toyoda Gosei Co Ltd
•
Filing: 1991-05-30
•
Granted: 1993-04-27
•
Expires: 2011-05-30
Abstract
Abstract A dry etching method for Al x Ga 1-x N (0≦x≦1) semiconductor uses plasma of a boron trichloride (BCl 3 ) gas. The etching rate of the method is 490 Å/min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl 3 gas. After etching with the plasma of a BCl 3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al x Ga 1-x N; 0≦x<1), an i-layer, an electrode formed on the etched surface of the n-layer through a through hole, the through hole being formed through the i-layer to the n-layer by the dry etching with the plasma of the born trichloride (BCl 3 ) gas and being successively etched by the plasma of an inert gas, and an electrode formed on the surface of said i-layer.
Inventors
- 👤 Masahiro Kotaki
- 👤 Katsuhide Manabe
- 👤 Masaki Mori
- 👤 Masafumi Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:46
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H10P50/69; H10P50/691; H10P50/692
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
135 words
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma; successively introducing an inert gas into said reaction chamber under vacuum after etching with said plasma; successively applying high-frequency power to said insert gas for producing plasma of said inert gas; and etching an etched surface of said Al X Ga 1-X N (0<X<1) semiconductor with said plasma of said inert gas after etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma of said boron trichloride (BCl 3 ) gas.
Claim 2
Dependent Claim
135 words
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma; successively introducing an inert gas into said reaction chamber under vacuum after etching with said plasma; successively applying high-frequency power to said insert gas for producing plasma of said inert gas; and etching an etched surface of said Al X Ga 1-X N (0<X<1) semiconductor with said plasma of said inert gas after etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma of said boron trichloride (BCl 3 ) gas.
Claim 3
Dependent Claim
46 words
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor according to claim 1, wherein a flow rate of said inert gas is 2-30 cc/min., degree of vacuum is 0.02-0.2 Torr and said high-frequency power is 0.1-0.5 W/cm 2 .
Claim 4
Dependent Claim
27 words
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor according to claim 1, wherein said inert gas is argon (Ar).
Claim 5
Dependent Claim
36 words
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor according to claim 1, wherein time of etching with said plasma of said inert gas is 2 to 15 minutes.
Claim 6
Independent Claim
151 words
A method for forming an ohmic contact on semiconductor comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride ((BCl 3 ) gas for producing plasma thereof; etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma; successively introducing an inert gas into said reaction chamber under vacuum after etching with said plasma; successively applying high-frequency power to said inert gas for producing plasma of said inert gas; etching an etched surface of said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma of said inert gas after etching said Al X Ga l-X N (0≦X≦1) semiconductor with said plasma of said boron trichloride ((BCl 3 ) gas; and forming an electrode on a surface of said Al X Ga 1-X N (0≦X≦1) semiconductor etched by said plasma of said inert gas.
Claim 7
Independent Claim
151 words
A method for forming an ohmic contact on semiconductor comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride ((BCl 3 ) gas for producing plasma thereof; etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma; successively introducing an inert gas into said reaction chamber under vacuum after etching with said plasma; successively applying high-frequency power to said inert gas for producing plasma of said inert gas; etching an etched surface of said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma of said inert gas after etching said Al X Ga l-X N (0≦X≦1) semiconductor with said plasma of said boron trichloride ((BCl 3 ) gas; and forming an electrode on a surface of said Al X Ga 1-X N (0≦X≦1) semiconductor etched by said plasma of said inert gas.
Claim 8
Dependent Claim
81 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BC 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a flow rate of said etching gas is 2-30 cc/min., a degree of vacuum is 0.02-0.2 Torr and said high-frequency power is 0.1-0.5 w/cm 2 .
Claim 9
Dependent Claim
81 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BC 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a flow rate of said etching gas is 2-30 cc/min., a degree of vacuum is 0.02-0.2 Torr and said high-frequency power is 0.1-0.5 w/cm 2 .
Claim 10
Dependent Claim
86 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a mask for said etching is a double layer comprising an SiO 2 layer formed on said semiconductor and an Al 2 O 3 layer formed on said SiO 2 layer.
Claim 11
Dependent Claim
86 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a mask for said etching is a double layer comprising an SiO 2 layer formed on said semiconductor and an Al 2 O 3 layer formed on said SiO 2 layer.
Claim 12
Dependent Claim
83 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a mask for said etching is a double layer comprising an SiO 2 layer formed on said semiconductor and a photoresist layer formed on said SiO 2 layer.
Claim 13
Dependent Claim
83 words
A dry etching method for etching semiconductors comprising the steps of: introducing a boron trichloride (BCl 3 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to said boron trichloride (BCl 3 ) gas for producing plasma thereof; and etching said Al X Ga 1-X N (0≦X≦1) semiconductor with said plasma, wherein a mask for said etching is a double layer comprising an SiO 2 layer formed on said semiconductor and a photoresist layer formed on said SiO 2 layer.
References Cited (Backward Citations)
JPS5343480A
Cited
US4569718A
Cited
US4370195A
Cited
US4635343A
Cited
US4617193A
Cited
US4640737A
Cited
EP0144142A2
Cited
US4855249A
Cited
EP0277597A2
Cited
US4911102A
Cited
JPH01278026A
Cited
JPH01278025A
Cited
US4946548A
Cited
US4985113A
Cited
US5034092A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-26 | 1996-10-26 | 1997-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-26 | 2000-10-26 | 2001-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-26 | 2004-10-26 | 2005-04-27 | $7700.00 | Window Closed / Lapsed |