US4946548A
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Dry etching method for semiconductor
Assignee: Japan Science and Technology Agency
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Filing: 1989-04-17
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Granted: 1990-08-07
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Expires: 2009-04-17
Abstract
Abstract A dry etching method for Al x Ga 1-x N(0≦x≦1) semiconductor is disclosed. The method includes a first method using plasma of carbon tetrachloride (CCl 4 ) gas, and a second method using plasma of dichlorodifluoromethane (CCl 2 F 2 ) gas. The etching speed of the former method was 430 Å/min. and the etching speed of the latter method was 625 Å/min. Also, no crystal defect was produced in the above-mentioned semiconductor by the above-mentioned etching.
Inventors
- 👤 Masahiro Kotaki
- 👤 Masafumi Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:52
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
49 words
A dry etching method for Al x Ga 1-x N(0≦X≦1) semiconductors comprising: introducing carbon tetrachloride (CCl 4 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to produce plasma of said carbon tetrachloride gas; and etching said Al x Ga 1-x N(O≦x≦1) semiconductor with said plasma.
Claim 2
Dependent Claim
49 words
A dry etching method for Al x Ga 1-x N(0≦X≦1) semiconductors comprising: introducing carbon tetrachloride (CCl 4 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to produce plasma of said carbon tetrachloride gas; and etching said Al x Ga 1-x N(O≦x≦1) semiconductor with said plasma.
Claim 3
Dependent Claim
34 words
A dry etching method in accordance with claim 1, wherein the flow rate of said etching gas is 5-30cc/min., the degree of vacuum is 0.02-0.2 Torr and said high-frequency power is 0.1-0.5W/cm 2 .
Claim 4
Dependent Claim
49 words
A dry etching method for Al x Ga 1-x N(0≦X≦1) semiconductors comprising; introducing dichlorodifluoromethane (CCl 2 F 2 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to produce plasma of said dichlorodifluoromethane gas; and etching said Al x Ga 1-x N(0≦x≦1) semiconductor with said plasma.
Claim 5
Dependent Claim
49 words
A dry etching method for Al x Ga 1-x N(0≦X≦1) semiconductors comprising; introducing dichlorodifluoromethane (CCl 2 F 2 ) etching gas into a reaction chamber under vacuum; applying high-frequency power to produce plasma of said dichlorodifluoromethane gas; and etching said Al x Ga 1-x N(0≦x≦1) semiconductor with said plasma.
Claim 6
Dependent Claim
34 words
A dry etching method in accordance with claim 3, wherein the flow rate of said etching gas is 5-30cc/min., the degree of vacuum is 0.02-0.1 Torr, and said high-frequency power is 0.1-0.5W/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-08-06 | 1994-02-05 | 1994-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-06 | 1998-02-05 | 1998-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-06 | 2002-02-05 | 2002-08-07 | $7700.00 | Window Closed / Lapsed |