US4640737A
Expired / Lapsed
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Dry etching method of compound semiconductor
Assignee: Toshiba Corp
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Filing: 1984-10-26
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Granted: 1987-02-03
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Expires: 2004-10-26
Abstract
Abstract A compound semiconductor is dry-etched by introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and an anode opposite thereto. High-frequency electric power is applied between the cathode and the anode, thereby generating a plasma from the introduced plasma-generating gas. The compound semiconductor is etched with the thus formed plasma.
Inventors
- 👤 Hiroko Nagasaka
- 👤 Nawoto Motegi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:53
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
112 words
A method for preparing a semiconductor light-emitting device including a semiconductor laser and a light-emitting diode, by reactive ion etching of a compound semiconductor comprising the steps of: (a) introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode supporting a workpiece comprising a Group III-V compound semiconductor containing an element which may be readily oxidized and an anode opposite thereto; (b) applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and (c) etching said compound semiconductor with said plasma according to reactive ion etching, so as to prepare a light-emitting semiconductor device.
Claim 2
Independent Claim
112 words
A method for preparing a semiconductor light-emitting device including a semiconductor laser and a light-emitting diode, by reactive ion etching of a compound semiconductor comprising the steps of: (a) introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode supporting a workpiece comprising a Group III-V compound semiconductor containing an element which may be readily oxidized and an anode opposite thereto; (b) applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and (c) etching said compound semiconductor with said plasma according to reactive ion etching, so as to prepare a light-emitting semiconductor device.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein a total gas pressure of the boron trichloride and the chlorine which are introduced in said plasma generation region is not more than 0.15 Torr.
Claim 4
Dependent Claim
24 words
The method according to claim 1, wherein a ratio of the chlorine included in said plasma gas is not more than 40% by volume.
Claim 5
Dependent Claim
23 words
The method according to claim 1, wherein the high-frequency electric power has a density of 0.1 W/cm 2 to 1 W/cm 2 .
Claim 6
Dependent Claim
12 words
The method according to claim 1, wherein said compound semiconductor is GaAlAs.
Claim 7
Dependent Claim
32 words
The method according to claim 1, wherein said compound semiconductor is formed on a GaAs substrate and is a multilayer having a plurality of GaAlAs layers respectively having different contents of aluminum.
Claim 8
Dependent Claim
31 words
The method according to claim 1, wherein the total gas pressure of said boron trichloride and said chlorine which are introduced into said plasma generation region is 0.04 to 0.08 Torr.
Claim 9
Dependent Claim
26 words
The method according to claim 1, further comprising evacuating said plasma generation region to a pressure of 0.000006 Torr or less before introducing said plasma-generating gas.
Claim 10
Dependent Claim
16 words
The method according to claim 7, wherein said element contained in said compound semiconductor is aluminum.
Claim 11
Dependent Claim
15 words
The method according to claim 9, wherein said compound semiconductor is GaAlAs, GaAlAsP or InAlGaP.
Claim 12
Independent Claim
106 words
A method for preparing a semiconductor light-emitting device including a semiconductor laser and a light-emitting diode, by reactive ion etching of a compound semiconductor comprising the steps of: (a) introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode supporting a workpiece comprising a group III-V compound semiconductor containing aluminum and an anode opposite thereto; (b) applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and (c) etching said compound semiconductor with said plasma according to reactive ion etching, so as to prepare a light-emitting semiconductor device.
Claim 13
Independent Claim
106 words
A method for preparing a semiconductor light-emitting device including a semiconductor laser and a light-emitting diode, by reactive ion etching of a compound semiconductor comprising the steps of: (a) introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode supporting a workpiece comprising a group III-V compound semiconductor containing aluminum and an anode opposite thereto; (b) applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and (c) etching said compound semiconductor with said plasma according to reactive ion etching, so as to prepare a light-emitting semiconductor device.
Claim 14
Dependent Claim
23 words
The method according to claim 11, wherein said compound semiconductor has a multi-layered structure of GaAs layers respectively having different contents of Al.
Claim 15
Dependent Claim
16 words
The method according to claim 12, wherein said multi-layered structure is formed on a GaAs substrate.
References Cited (Backward Citations)
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