EP0277597A2
Expired / Lapsed
EP
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Gallium nitride group semiconductor light emitting diode and the process of producing the same
Assignee: Nagoya University
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Filing: 1988-01-28
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Granted: —
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Expires: 2008-01-28
Abstract
Abstract A thin film of SiO₂ (32) is patterned on an N layer consisting of N-type Aℓ x Ga 1-x N (inclusive of x = 0) (31). Next, I-type Aℓ x Ga 1-x N (inclusive of x = 0) (33) is selectively grown and the portion on the N layer (31) grows into an I-layer (33) consisting an active layer of a light emitting diode, and that on the SiO₂ thin film (32) grows into a conductive layer (34). Electrodes (35,36) are formed on the I-layer (33) and conductive layer (34) to constitute the light emitting diode. Also, on the surface a ({11 2 0}) of a sapphire substrate (24), a buffer layer (30) consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor (31) is formed.
Inventors
- 👤 Katsuhide Manabe
- 👤 Nobuo Okazaki
- 👤 Isamu Akasaki
- 👤 Kazumasa Hiramatsu
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 15:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
121 words
(1) A gallium nitride group semiconductor light emitting diode having, an N layer consisting of an N-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0), an SiO₂ thin film patterned on the main surface of said N layer, an I layer selectively developed by doping impurities on said N layer onto which said SiO₂ thin film is patterned, and consisting of an I-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) joined to said N layer, a non-single crystal conductive layer formed on said SiO₂ thin film with the growth of said I layer, and electrode layers joined to the surface of said I layer and said conductive layer.
Claim 2
Dependent Claim
146 words
(2) A gallium nitride group semiconductor light emitting diode having, a sapphire substrate, a buffer layer consisting of aluminum nitride (AℓN) formed on the main surface of said sapphire substrate, an N layer consisting of an N-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) formed on said buffer layer, an SiO₂ thin film patterned on the main surface of said N layer, an I layer selectively grown by doping impurities on said N layer onto which said SiO₂ thin film is patterned, and consisting of an I-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) joined to said N layer, a non-single crystal conductive layer formed on said SiO₂ thin film with the growth of said I layer, and electrode layers joined to the surface of said I layer and said conductive layer.
Claim 3
Dependent Claim
29 words
(3) A gallium nitride group semiconductor light emitting diode as claimed in claim 2, wherein the main surface of said sapphire substrate is a surface a ({11 2 0}).
Claim 4
Dependent Claim
27 words
(4) A gallium nitride group semiconductor light emitting diode as claimed in claim 2, wherein the main surface of said sapphire substrate is a surface c ({0001}).
Claim 5
Dependent Claim
184 words
(5) A process of producing a gallium nitride group semiconductor light emitting diode, whereby a SiO₂ thin film patterned to open the portion corresponding to an active layer of the light emitting diode is formed on the main surface of an N layer substrate consisting of an N-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; of inclusive x = 0), then, by growing the gallium nitride group semiconductor (Aℓ x GA 1-x N; inclusive of x = 0) doped with impurities, on the main surface of said N layer substrate onto which said SiO₂ thin film is patterned, an I layer consisting of an I-type single crystal gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) is formed on the portion joined to said N layer substrate, a conductive layer consisting of a non-single crystal gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) is formed on the portion joined to said SiO₂ thin film, and electrode layers joined to the surface of said I layer and said conductive layer are formed.
Claim 6
Dependent Claim
209 words
(6) A process of producing a gallium nitride group semiconductor light emitting diode, whereby a buffer layer consisting of aluminum nitride (AℓN) is formed on the main surface of a sapphire substrate, an N layer consisting of an N-type gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) is formed on said buffer layer, an SiO₂ thin film patterned to open the portion corresponding to an active layer of the light emitting diode is formed on the main surface of said N layer, then, by growing the gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) doped with impurities, on the main surface of said N layer substrate onto which said SiO₂ thin film is patterned, an I layer consisting of an I-type single crystal gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) is formed at the portion joined to said N layer substrate, a conductive layer consisting of a non-single crystal gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive x = 0) is formed at the portion joined to said SiO₂ thin film, and electrode layers joined to the surface of said I layer and said conductive layer are formed.
Claim 7
Dependent Claim
33 words
(7) The process of producing a gallium nitride group semiconductor light emitting diode as claimed in claim 6, wherein the main surface of said sapphire substrate is a surface a ({11 2 0}).
Claim 8
Dependent Claim
31 words
(8) The process of producing a gallium nitride group semiconductor light emitting diode as claimed in claim 6, wherein the main surface of said sapphire substrate is a surface c ({0001}).
Claim 9
Dependent Claim
42 words
(9) A gallium nitride group semiconductor light emitting diode having, a sapphire substrate including a surface a ({11 2 0}) as the main surface, and a buffer layer consisting of aluminum nitride (AℓN) formed on the main surface of said sapphire substrate.
Claim 10
Dependent Claim
39 words
(10) A gallium nitride group semiconductor having, a sapphire substrate including a surface a ({11 2 0}) as the main surface, and a buffer layer consisting of aluminum nitride (AℓN) formed on the main surface of said sapphire substrate.
Claim 11
Dependent Claim
70 words
(11) A process of vapor growth of a gallium nitride group semiconductor thin film using an organometallic compound gas, characterized in that a buffer layer consisting of aluminum nitride is grown on a surface a ({11 2 0}) of a sapphire substrate, and the vapor growth of the gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) thin film is performed on the buffer layer.
References Cited (Backward Citations)
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