Process of vapor growth of gallium nitride and its apparatus

Claim 1

A vapor growth apparatus for compound semiconductors comprising: a reaction chamber wherein reactant gases are introduced and vapor growth is performed, said reaction chamber having a first side and a second side, a susceptor which is installed in said reaction chamber at said second side and whereon a substrate to be vapor-grown is placed, a first reactant gas tube which feeds at least one kind of said reactant gases from said first side of said reaction chamber to said second side, said tube having first and second ends, a second reactant gas tube which surrounds said first reactant gas tube forming an annulus and which feeds another kind of said reactant gases to said second side of said reaction chamber, said tube having first and second ends, and a mixing tube having first and second ends, said first end of said mixing tube being connected to and in open communication with said second end of said second gas tube and in close proximity to second end of said first gas tube, thereby causing mixing of said reactant gases, said second end of said mixing tube being in close proximity to said susceptor, thereby causing the mixed reactant gases to be blown against the surface of said substrate placed on said susceptor, said mixing tube being shaped in a manner such that the cross-section thereof gradually widens at said first end of said chamber in the direction away from said first end toward said second end, and gradually narrows at said second end in a direction away from said first end toward said second end, thereby forming at least one mixing chamber.