US4147571A
Expired / Lapsed
US
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Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
Assignee: HP Inc
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Filing: 1977-07-11
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Granted: 1979-04-03
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Expires: 1997-07-11
Abstract
Abstract A process is provided for the VPE growth of III/V compounds such as Al x Ga 1-x As in which the group III elements are transported into the reaction zone in the form of organometallic compounds in the presence of a gaseous halogen or hydrogen halide such as hydrogen chloride (HCl).
Inventors
- 👤 Gerald B. Stringfellow
- 👤 Howard T. Hall, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:09
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/11
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
124 words
A process for the preparation of III/V semiconductor materials comprising the steps of: (a) positioning in a reaction chamber a substrate of a material suitable for epitaxial growth of III/V compounds thereon; (b) introducing into said reaction chamber a gaseous mixture including at least one organometallic compound of a group III element, at least one compound of a group V element, one of a hydrogen halide and a halogen, and hydrogen; (c) heating said reaction chamber walls to a temperature in the range 750° C. to 1000° C., and heating said substrate to a temperature in the range 650° C. to 850° C.; and (d) depositing on said substrate an epitaxial layer of a III/V compound of said group III and group V elements.
Claim 2
Dependent Claim
124 words
A process for the preparation of III/V semiconductor materials comprising the steps of: (a) positioning in a reaction chamber a substrate of a material suitable for epitaxial growth of III/V compounds thereon; (b) introducing into said reaction chamber a gaseous mixture including at least one organometallic compound of a group III element, at least one compound of a group V element, one of a hydrogen halide and a halogen, and hydrogen; (c) heating said reaction chamber walls to a temperature in the range 750° C. to 1000° C., and heating said substrate to a temperature in the range 650° C. to 850° C.; and (d) depositing on said substrate an epitaxial layer of a III/V compound of said group III and group V elements.
Claim 3
Dependent Claim
18 words
A process as in claim 1 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 4
Dependent Claim
19 words
A process as in claim 1 wherein: said group II element is Al; and said III/V compound is AlAs.
Claim 5
Dependent Claim
16 words
A process as in claim 3 wherein: said organometallic compound is Al(CH 3 ) 3 .
Claim 6
Dependent Claim
18 words
A process as in claim 4 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 7
Dependent Claim
19 words
A process as in claim 1 wherein: said group III element is Ga; and said III/V compound is GaAs.
Claim 8
Dependent Claim
18 words
A process as in claim 6 wherein: said organometallic compound is Ga(C 2 H 5 ) 3 .
Claim 9
Dependent Claim
18 words
A process as in claim 7 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 10
Dependent Claim
40 words
A process as in claim 1 wherein: said at least one organometallic compound of a group III element includes a first organometallic compound of a first group III element and a second organometallic compound of a second group III element.
Claim 11
Dependent Claim
18 words
A process as in claim 9 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 12
Dependent Claim
37 words
A process as in claim 10 wherein: said first group III element is Al; said second group III element is Ga; said III/V compound is Al x Ga 1-x As where X is in the range 0<x<1.
Claim 13
Dependent Claim
17 words
A process as in claim 11 wherein: said first organometallic compound is Al(CH 3 ) 3 .
Claim 14
Dependent Claim
19 words
A process as in claim 12 wherein: said second organometallic compound is Ga(C 2 H 5 ) 3 .
Claim 15
Dependent Claim
18 words
A process as in claim 13 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 16
Dependent Claim
14 words
A process as in claim 1 wherein: said substrate is of a III/V material.
Claim 17
Dependent Claim
18 words
A process as in claim 15 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 18
Dependent Claim
19 words
A process as in claim 15 wherein: said group III element is Al; and said III/V compound is AlAs.
Claim 19
Dependent Claim
16 words
A process as in claim 17 wherein: said organometallic compound is Al(CH 3 ) 3 .
Claim 20
Dependent Claim
18 words
A process as in claim 18 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 21
Dependent Claim
19 words
A process as in claim 15 wherein: said group III element is Ga; and said III/V compound is GaAs.
Claim 22
Dependent Claim
18 words
A process as in claim 20 wherein: said organometallic compound is Ga(C 2 H 5 ) 3 .
Claim 23
Dependent Claim
18 words
A process as in claim 21 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 24
Dependent Claim
40 words
A process as in claim 15 wherein: said at least one organometallic compound of a group III element includes a first organometallic compound of a first group III element and a second organometallic compound of a second group III element.
Claim 25
Dependent Claim
18 words
A process as in claim 23 wherein: said one of a hydrogen halide and a halogen comprises HCl.
Claim 26
Dependent Claim
37 words
A process as in claim 23 wherein: said first group III element is Al; said second group III element is Ga; said III/V compound is Al x Ga 1-x As where X is in the range 0<x<1.
Claim 27
Dependent Claim
17 words
A process as in claim 25 wherein: said second organometallic compound is Al(CH 3 ) 3 .
Claim 28
Dependent Claim
19 words
A process as in claim 26 wherein: said second organometallic compound is Ga(C 2 H 5 ) 3 .
Claim 29
Dependent Claim
18 words
A process as in claim 27 wherein: said one of a hydrogen halide and a halogen comprises HCl.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-02 | 1982-10-02 | 1983-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-02 | 1986-10-02 | 1987-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-02 | 1990-10-02 | 1991-04-03 | $7700.00 | Window Closed / Lapsed |