US4152182A
Expired / Lapsed
US
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Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
Assignee: International Business Machines Corp
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Filing: 1978-05-15
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Granted: 1979-05-01
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Expires: 1998-05-15
Abstract
Abstract Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum oxide substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon.
Inventors
- 👤 Richard F. Rutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:37
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; C; C09; C09K; C09K11/00; C09K11/08; C09K11/64; C30; C30B; C30B25/00; C30B25/02; C30B25/22; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
91 words
The process of epitaxially forming electronic grade aluminum nitride on an aluminum oxide substrate comprising the steps of: positioning carbon and a source of aluminum oxide in convection proximity to an aluminum oxide crystal substrate, heating said substrate to a temperature of at least 1670° C. and said source to a temperature of at least 1900° C. while passing a gaseous mixture comprising nitrogen an hydrogen past said source and said substrate, applying heat for the duration of the formation of an aluminum nitride film on said aluminum oxide crystal substrate.
Claim 2
Dependent Claim
91 words
The process of epitaxially forming electronic grade aluminum nitride on an aluminum oxide substrate comprising the steps of: positioning carbon and a source of aluminum oxide in convection proximity to an aluminum oxide crystal substrate, heating said substrate to a temperature of at least 1670° C. and said source to a temperature of at least 1900° C. while passing a gaseous mixture comprising nitrogen an hydrogen past said source and said substrate, applying heat for the duration of the formation of an aluminum nitride film on said aluminum oxide crystal substrate.
Claim 3
Dependent Claim
13 words
The process of claim 1 wherein ammonia is added to said gaseous mixture.
Claim 4
Dependent Claim
18 words
The process of claim 1 including the step of heating in the presence of a conductivity determining impurity.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-30 | 1982-10-30 | 1983-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-30 | 1986-10-30 | 1987-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-30 | 1990-10-30 | 1991-05-01 | $7700.00 | Window Closed / Lapsed |