US4008111A
Expired / Lapsed
US
⏱️ 0.0 years remaining
AlN masking for selective etching of sapphire
Assignee: International Business Machines Corp
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Filing: 1975-12-31
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Granted: 1977-02-15
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Expires: 1995-12-31
Abstract
Abstract A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, for instance. The AlN film is etched in a predetermined pattern and heat treated. The etchants used may be either H 2 or molten Al which will selectively attack the sapphire substrate in the regions exposed by the AlN mask.
Inventors
- 👤 Richard Frederick Rutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:40
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/53; C04B41/5338; C04B41/80; C04B41/91; C09; C09K; C09K13/00; G; G01; G01D; G01D15/00; G01D15/16; G01D15/18; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/113; Y10S148/15
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
58 words
A method of etching Al 2 O 3 including the steps of: a. depositing an AlN film with a predetermined pattern on said Al 2 O 3 ; and b. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 2
Independent Claim
58 words
A method of etching Al 2 O 3 including the steps of: a. depositing an AlN film with a predetermined pattern on said Al 2 O 3 ; and b. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 3
Independent Claim
63 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern in said AlN film; and c. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 4
Independent Claim
63 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern in said AlN film; and c. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 5
Independent Claim
82 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film on the Al 2 O 3 ; b. forming a predetermined pattern in said AlN film; c. applying an Al 2 O 3 etchant on said patterned AlN film; and d. heating said Al 2 O 3 to cause said AlN film to become more resistant to said Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 6
Independent Claim
82 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film on the Al 2 O 3 ; b. forming a predetermined pattern in said AlN film; c. applying an Al 2 O 3 etchant on said patterned AlN film; and d. heating said Al 2 O 3 to cause said AlN film to become more resistant to said Al 2 O 3 etchant whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 7
Dependent Claim
32 words
A method for etching Al 2 O 3 according to claim 3 wherein said Al 2 O 3 is heated to a temperature of from about 1400° C to about 2000° C.
Claim 8
Dependent Claim
27 words
A method for etching Al 2 O 3 according to claim 3 wherein said Al 2 O 3 is heated to a temperature of about 1800° C.
Claim 9
Dependent Claim
22 words
A method for etching Al 2 O 3 according to claim 2 wherein the Al 2 O 3 etchant is metallic aluminum.
Claim 10
Dependent Claim
23 words
A method for etching Al 2 O 3 according to claim 2 wherein said Al 2 O 3 etchant is H 2 .
Claim 11
Independent Claim
51 words
A method for etching sapphire bodies including the steps of: a. depositing an AlN film on said sapphire body; b. etching a predetermined pattern in said AlN film; and c. heating said sapphire body in the presence of a sapphire etchant whereby said sapphire body is etched in said predetermined pattern.
Claim 12
Independent Claim
51 words
A method for etching sapphire bodies including the steps of: a. depositing an AlN film on said sapphire body; b. etching a predetermined pattern in said AlN film; and c. heating said sapphire body in the presence of a sapphire etchant whereby said sapphire body is etched in said predetermined pattern.
Claim 13
Dependent Claim
31 words
A method of etching a sapphire body in a furnace according to claim 8 wherein the furnace contains an ambient comprising a mixture of an inert gas and H 2 .
Claim 14
Dependent Claim
22 words
A method of etching a sapphire body according to claim 9 wherein said mixture comprises 85% Ar and 15% H 2 .
Claim 15
Dependent Claim
17 words
A method for etching sapphire bodies according to claim 8 wherein said etchant is H 2 .
Claim 16
Dependent Claim
19 words
A method for etching Al 2 O 3 according to claim 1 wherein said sapphire etchant is metallic aluminum.
Claim 17
Dependent Claim
23 words
A method for etching Al 2 O 3 according to claim 1 wherein the Al 2 O 3 etchant is H 2 .
Claim 18
Independent Claim
70 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film with a predetermined pattern on said Al 2 O 3 ; and b. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant to cause said AlN film to become more resistant to the etch whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 19
Independent Claim
70 words
A method for etching Al 2 O 3 including the steps of: a. depositing an AlN film with a predetermined pattern on said Al 2 O 3 ; and b. heating said Al 2 O 3 in the presence of an Al 2 O 3 etchant to cause said AlN film to become more resistant to the etch whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 20
Dependent Claim
22 words
A method for etching Al 2 O 3 according to claim 14 where the Al 2 O 3 etchant is metallic aluminum.
Claim 21
Dependent Claim
23 words
A method for etching Al 2 O 3 according to claim 14 where the Al 2 O 3 etchant is H 2 .
Claim 22
Independent Claim
76 words
A method for etching sapphire bodies including the steps of: a. epitaxially depositing an AlN film on a sapphire body; b. forming a predetermined pattern in said AlN film; c. applying metallic aluminum on said pattern AlN film; and d. heating said sapphire body to cause said metallic aluminum to become molten and to cause said AlN film to become more resistant to said molten aluminum whereby said sapphire body is etched in said predetermined pattern.
Claim 23
Independent Claim
76 words
A method for etching sapphire bodies including the steps of: a. epitaxially depositing an AlN film on a sapphire body; b. forming a predetermined pattern in said AlN film; c. applying metallic aluminum on said pattern AlN film; and d. heating said sapphire body to cause said metallic aluminum to become molten and to cause said AlN film to become more resistant to said molten aluminum whereby said sapphire body is etched in said predetermined pattern.
Claim 24
Independent Claim
76 words
A method for etching sapphire bodies including the steps of: a. epitaxially depositing an AlN film on a sapphire body; b. forming a predetermined pattern in said AlN film; c. applying a metallic Al body on said pattern AlN film; and d. heating said sapphire body to cause said Al to become molten and to cause said AlN film to become resistant to said molten Al, whereby said sapphire body is etched in said predetermined pattern.
Claim 25
Independent Claim
76 words
A method for etching sapphire bodies including the steps of: a. epitaxially depositing an AlN film on a sapphire body; b. forming a predetermined pattern in said AlN film; c. applying a metallic Al body on said pattern AlN film; and d. heating said sapphire body to cause said Al to become molten and to cause said AlN film to become resistant to said molten Al, whereby said sapphire body is etched in said predetermined pattern.
Claim 26
Dependent Claim
28 words
A method for etching sapphire bodies according to claim 18 wherein said sapphire body is heated to a temperature of from about 1400° C to about 2000° C.
Claim 27
Dependent Claim
23 words
A method for etching sapphire bodies according to claim 18 wherein said sapphire body is heated to a temperature of about 1800° C.
Claim 28
Independent Claim
171 words
A method for fabricating ink jet nozzle arrays including the steps of: a. epitaxially depositing AlN films on the upper and lower surfaces of a sapphire body; b. forming predetermined and matching aperture patterns in said AlN films said holes in said upper AlN film being larger than those in said lower AlN films; c. etching said upper surface of said sapphire body in said predetermined pattern with molten Al for a time sufficient to etch to within about 2μm to about 20μm of the lower surface of said sapphire body; discontinuing etching the upper surface and treating the etched regions with HCl to remove Al therefrom; etching the lower surface of said sapphire body in said predetermined pattern with molten Al until such etched regions are in contact with the etched regions of said upper surface of said sapphire body; removing Al from the etched regions with HCl and thereafter; removing the AlN films from said surfaces of said sapphire body whereby there remains an array of ink jet nozzles.
Claim 29
Independent Claim
171 words
A method for fabricating ink jet nozzle arrays including the steps of: a. epitaxially depositing AlN films on the upper and lower surfaces of a sapphire body; b. forming predetermined and matching aperture patterns in said AlN films said holes in said upper AlN film being larger than those in said lower AlN films; c. etching said upper surface of said sapphire body in said predetermined pattern with molten Al for a time sufficient to etch to within about 2μm to about 20μm of the lower surface of said sapphire body; discontinuing etching the upper surface and treating the etched regions with HCl to remove Al therefrom; etching the lower surface of said sapphire body in said predetermined pattern with molten Al until such etched regions are in contact with the etched regions of said upper surface of said sapphire body; removing Al from the etched regions with HCl and thereafter; removing the AlN films from said surfaces of said sapphire body whereby there remains an array of ink jet nozzles.
Claim 30
Independent Claim
83 words
A method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern in said AlN film; c. heating said Al 2 O 3 in the presence of metallic aluminum; and d. inserting into the furnace an ambient including N 2 to contain the aluminum on the Al 2 O 3 , whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 31
Independent Claim
83 words
A method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern in said AlN film; c. heating said Al 2 O 3 in the presence of metallic aluminum; and d. inserting into the furnace an ambient including N 2 to contain the aluminum on the Al 2 O 3 , whereby said Al 2 O 3 is etched in said predetermined pattern.
Claim 32
Independent Claim
127 words
A method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern of holes in said AlN film; c. heating said Al 2 O 3 and AlN film in the presence of H 2 and an additional AlN source; d. inserting into the furnace an additional ambient of N 2 , whereby said AlN film holes are decreased in size by an epitaxial deposition on the AlN film from the additional AlN source; and e. subsequently removing N 2 from the ambient and heating said Al 2 O 3 whereby said Al 2 O 3 is etched according to the decreased size holes of the AlN film.
Claim 33
Independent Claim
127 words
A method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern of holes in said AlN film; c. heating said Al 2 O 3 and AlN film in the presence of H 2 and an additional AlN source; d. inserting into the furnace an additional ambient of N 2 , whereby said AlN film holes are decreased in size by an epitaxial deposition on the AlN film from the additional AlN source; and e. subsequently removing N 2 from the ambient and heating said Al 2 O 3 whereby said Al 2 O 3 is etched according to the decreased size holes of the AlN film.
Claim 34
Dependent Claim
112 words
In a method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern of holes in said AlN film; c. heating said Al 2 O 3 and AlN film in the presence of H 2 and an additional AlN source whereby said Al 2 O 3 is etched in said predetermined AlN film pattern of holes; and d. inserting into the furnace an additional ambient of N 2 , whereby said holes in the AlN film are decreased in size by epitaxial deposition on the AlN film from the additional AlN source.
Claim 35
Dependent Claim
112 words
In a method for etching Al 2 O 3 in a furnace including the steps of: a. depositing an AlN film on said Al 2 O 3 ; b. etching a predetermined pattern of holes in said AlN film; c. heating said Al 2 O 3 and AlN film in the presence of H 2 and an additional AlN source whereby said Al 2 O 3 is etched in said predetermined AlN film pattern of holes; and d. inserting into the furnace an additional ambient of N 2 , whereby said holes in the AlN film are decreased in size by epitaxial deposition on the AlN film from the additional AlN source.
Claim 36
Independent Claim
58 words
A method of etching MgAl 2 O 4 including the steps of: a. depositing an AlN film with a predetermined pattern on said MgAl 2 O 4 ; and b. heating said MgAl 2 O 4 in the presence of an MgAl 2 O 4 etchant whereby said MgAl 2 O 4 is etched in said predetermined pattern.
Claim 37
Independent Claim
58 words
A method of etching MgAl 2 O 4 including the steps of: a. depositing an AlN film with a predetermined pattern on said MgAl 2 O 4 ; and b. heating said MgAl 2 O 4 in the presence of an MgAl 2 O 4 etchant whereby said MgAl 2 O 4 is etched in said predetermined pattern.
Claim 38
Independent Claim
82 words
A method for etching MgAl 2 O 4 including the steps of: a. depositing an AlN film on the MgAl 2 O 4 ; b. forming a predetermined pattern in said AlN film; c. applying an MgAl 2 O 4 etchant on said patterned AlN film; and d. heating said MgAl 2 O 4 to cause said AlN film to become more resistant to said MgAl 2 O 4 etchant whereby said MgAl 2 O 4 is etched in said predetermined pattern.
Claim 39
Independent Claim
82 words
A method for etching MgAl 2 O 4 including the steps of: a. depositing an AlN film on the MgAl 2 O 4 ; b. forming a predetermined pattern in said AlN film; c. applying an MgAl 2 O 4 etchant on said patterned AlN film; and d. heating said MgAl 2 O 4 to cause said AlN film to become more resistant to said MgAl 2 O 4 etchant whereby said MgAl 2 O 4 is etched in said predetermined pattern.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1980-02-15 | 1980-08-16 | 1981-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-15 | 1984-08-16 | 1985-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-15 | 1988-08-16 | 1989-02-15 | $7700.00 | Window Closed / Lapsed |