US4569718A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for plasma etching III-V semiconductors with a BCl3 -Cl2 gas
Assignee: Nokia Bell Labs
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Filing: 1984-09-14
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Granted: 1986-02-11
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Expires: 2004-09-14
Abstract
Abstract The use of an anisotropic etchant containing BCl 3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.
Inventors
- 👤 Alexander D. Butherus
- 👤 Lucian A. D'Asaro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:42
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
104 words
A process for etching a semiconductor material consisting essentially of a III-V semiconductor material said process, comprising the steps of exposing said semiconductor material to an etching medium and allowing etching to proceed through contact of said medium with said semiconductor material characterized in that said medium anisotropically etches said semiconductor material and is a mixture that is subjected to a source of energy wherein said mixture comprises BCl 3 and a constituent which provides atomic Cl under the influence of said source of energy and wherein said atomic Cl reacts with said semiconductor material while essentially avoiding the sputtering of said semiconductor material.
Claim 2
Dependent Claim
104 words
A process for etching a semiconductor material consisting essentially of a III-V semiconductor material said process, comprising the steps of exposing said semiconductor material to an etching medium and allowing etching to proceed through contact of said medium with said semiconductor material characterized in that said medium anisotropically etches said semiconductor material and is a mixture that is subjected to a source of energy wherein said mixture comprises BCl 3 and a constituent which provides atomic Cl under the influence of said source of energy and wherein said atomic Cl reacts with said semiconductor material while essentially avoiding the sputtering of said semiconductor material.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said constituent providing Cl is Cl 2 .
Claim 4
Dependent Claim
21 words
The process of claim 1 wherein the partial pressure of said etching medium is in the range 50 to 200 microns.
Claim 5
Dependent Claim
24 words
The process of claim 1 wherein the constituent providing atomic chlorine comprises between 5 and 13 percent of the amount of said etching medium.
References Cited (Backward Citations)
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US4157556A
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US4194935A
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Cited
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-10 | 1989-08-12 | 1990-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-10 | 1993-08-12 | 1994-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-10 | 1997-08-12 | 1998-02-11 | $7700.00 | Window Closed / Lapsed |