US3795557A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process and material for manufacturing semiconductor devices
Assignee: LFE Corp
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Filing: 1972-05-12
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Granted: 1974-03-05
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Expires: 1992-05-12
Abstract
Abstract A PROCESS STEP AND MATERIAL FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES. TO FACILITATE THE ETCHING OF UNMASKED SILICON DIOXIDE, SILICON NITRIDE, SILICON MONOXIDE, BARE SILICON LAYERS, OR VARIOUS REFRACTORY METALS ON PRESELECTED PORTIONS OF A SEMICONDUCTOR SLICE, THE MATERIAL IS EXPOSED TO A LOW PRESSURE RF GENERATED "COLD" PLASMA (UNDER 325*C.) PRODUCED FROM A HOMOGENEOUS GASEOUS BINARY MIXTURE OF OXYGEN AND A HALOCARBON. THE HALOCARBON IS PREFERABLY A GAS HAVING ONE CARBON ATOM PER MOLECULE AND IS PREFERABLY FULLY FLUORINE-SUBSTITUTED.
Inventors
- 👤 A Jacob
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:45
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/134; C; C23; C23F; C23F4/00; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-04 | 1977-09-03 | 1978-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-04 | 1981-09-03 | 1982-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-04 | 1985-09-03 | 1986-03-05 | $7700.00 | Window Closed / Lapsed |