US5034092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching of semiconductor substrates
Assignee: NXP USA Inc
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Filing: 1990-10-09
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Granted: 1991-07-23
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Expires: 2010-10-09
Abstract
Abstract A method for plasma etching semiconductor materials using silicon tetrachloride and boron trichloride is provided. Less etch damage, a greater degree of anisotropy and a more controlled etch is provided by exposing a III-V compound semiconductor to the novel gas mixture.
Inventors
- 👤 Michael S. Lebby
- 👤 Stephen P. Rogers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:46
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18344; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H01S5/20; H01S5/2054; H01S5/2081
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
32 words
A method for etching a semiconductor substrate comprising: placing the semiconductor substrate in a plasma reactor; and exposing the semiconductor substrate to a plasma consisting essentially of boron trichloride and silicon tetrachloride.
Claim 2
Independent Claim
32 words
A method for etching a semiconductor substrate comprising: placing the semiconductor substrate in a plasma reactor; and exposing the semiconductor substrate to a plasma consisting essentially of boron trichloride and silicon tetrachloride.
Claim 3
Independent Claim
45 words
A method for etching a semiconductor III-V compound substrate comprising: placing the semiconductor III-V compound substrate in a plasma reactor; exposing the semiconductor III-V compound substrate to a plasma of at least boron trichloride and silicon tetrachloride; and etching multiple layers of III-V compound materials.
Claim 4
Independent Claim
45 words
A method for etching a semiconductor III-V compound substrate comprising: placing the semiconductor III-V compound substrate in a plasma reactor; exposing the semiconductor III-V compound substrate to a plasma of at least boron trichloride and silicon tetrachloride; and etching multiple layers of III-V compound materials.
Claim 5
Dependent Claim
19 words
The method of claim 2 further including etching multiple layers of gallium arsenide, aluminum arsenide, and indium gallium arsenide.
Claim 6
Independent Claim
50 words
A method for etching a semiconductor III-V compound substrate comprising: placing the semiconductor III-V compound substrate to a plasma reactor; exposing the semiconductor III-V compound substrate to a plasma of at least boron trichloride and silicon tetrachloride; and etching the semiconductor III-V compound substrate in a reactive ion etch system.
Claim 7
Independent Claim
50 words
A method for etching a semiconductor III-V compound substrate comprising: placing the semiconductor III-V compound substrate to a plasma reactor; exposing the semiconductor III-V compound substrate to a plasma of at least boron trichloride and silicon tetrachloride; and etching the semiconductor III-V compound substrate in a reactive ion etch system.
Claim 8
Dependent Claim
22 words
The method of claim 4 further including maintaining pressure in the plasma reactor in a range of 5 millitorr to 40 millitorr.
Claim 9
Dependent Claim
14 words
The method of claim 5 further including adjusting the pressure to substantially 10 millitorr.
Claim 10
Dependent Claim
30 words
The method of claim 4 further including maintaining a power density on the semiconductor substrate in a range of 0.5 watts per centimeter squared to 5 watts per centimeter squared.
Claim 11
Dependent Claim
18 words
The method of claim 7 further including adjusting the power density to substantially 1.5 watts per centimeter squared.
Claim 12
Dependent Claim
30 words
The method of claim 4 further including maintaining a percent by volume of gases comprising 20 to 90 percent of silicon tetrachloride and 10 to 90 percent of boron trichloride.
Claim 13
Dependent Claim
15 words
The method of claim 9 further including using a nonreactive gas for balancing the gases.
Claim 14
Dependent Claim
24 words
The method of claim 9 further including adjusting percent volume of silicon tetrachloride substantially to 50 percent and boron trichloride substantially to 50 percent.
Claim 15
Independent Claim
29 words
A method for etching VCSEL lasers comprising the following steps: defining a masking layer; and exposing the defined area to a gaseous plasma comprising boron trichloride and silicon tetrachloride.
Claim 16
Independent Claim
29 words
A method for etching VCSEL lasers comprising the following steps: defining a masking layer; and exposing the defined area to a gaseous plasma comprising boron trichloride and silicon tetrachloride.
Claim 17
Dependent Claim
12 words
The method of claim 12 further including using a metal masking structure.
Claim 18
Dependent Claim
12 words
The method of claim 12 further including using a dielectric masking structure.
Claim 19
Dependent Claim
13 words
The method of claim 12 further including using a polymeric photoresist masking structure.
Claim 20
Independent Claim
21 words
A method for improving VCSEL performance comprising: etching the VCSEL laser by a gaseous plasma comprising boron trichloride and silicon tetrachloride.
Claim 21
Independent Claim
21 words
A method for improving VCSEL performance comprising: etching the VCSEL laser by a gaseous plasma comprising boron trichloride and silicon tetrachloride.
Claim 22
Independent Claim
44 words
A method for providing improved performance of a surface emitting laser by creating less damage comprising the steps of: defining the surface emitting laser by a masking structure; and etching the structure by exposing it to a plasma comprising boron trichloride and silicon tetrachloride.
Claim 23
Independent Claim
44 words
A method for providing improved performance of a surface emitting laser by creating less damage comprising the steps of: defining the surface emitting laser by a masking structure; and etching the structure by exposing it to a plasma comprising boron trichloride and silicon tetrachloride.
Claim 24
Independent Claim
36 words
A method for anisotropically etching vertical cavity surface emitting laser comprising: defining the surface emitting laser by a masking structure; and etching the structure by exposing it to a plasma comprising boron trichloride and silicon tetrachloride.
Claim 25
Independent Claim
36 words
A method for anisotropically etching vertical cavity surface emitting laser comprising: defining the surface emitting laser by a masking structure; and etching the structure by exposing it to a plasma comprising boron trichloride and silicon tetrachloride.
Claim 26
Dependent Claim
15 words
The method of claim 18 wherein the anisotropy is improved by depositing a side-wall film.
Claim 27
Dependent Claim
22 words
The method of claim 1 further including using a nonreactive gas injected into the plasma for balancing gases used in the plasma.
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| 3.5 Years (Year 4) | 1994-07-22 | 1995-01-21 | 1995-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-22 | 1999-01-21 | 1999-07-23 | $3760.00 | Window Closed / Lapsed |
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