EP0144142A2
Expired / Lapsed
EP
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Method of fabrication a semiconductor laser
Assignee: Toshiba Corp
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Filing: 1984-10-25
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Granted: —
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Expires: 2004-10-25
Abstract
Abstract A compound semiconductor is dry-etched by introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region (6) which is defined between a cathode (5) for supporting a workpiece (23) comprising a compound semiconductor and an anode (4) opposite thereto. High-frequency electric power is applied between the cathode (5) and the anode (4), thereby generating a plasma from the introduced plasma-generating gas. The compound semiconductor is etched with the thus formed plasma.
Inventors
- 👤 Hiroko C/O Patent Division Nagasaka
- 👤 Nawoto C/O Patent Division Motegi
- 👤 Hideo C/O Patent Division Tamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 14:55
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/126; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
A dry etching method of a compound semiconductor comprising the steps of: introducing a plasma-generating gas into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and an anode opposite thereto; applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and etching said compound semiconductor with said plasma; characterized in that said plasma-generating gas comprises boron trichloride and chlorine.
Claim 2
Dependent Claim
77 words
A dry etching method of a compound semiconductor comprising the steps of: introducing a plasma-generating gas into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and an anode opposite thereto; applying high-frequency electric power between said cathode and said anode, thereby generating a plasma from said plasma-generating gas; and etching said compound semiconductor with said plasma; characterized in that said plasma-generating gas comprises boron trichloride and chlorine.
Claim 3
Dependent Claim
35 words
A method according to claim 1, characterized in that a total gas pressure of the boron trichloride and the chlorine which are introduced in said plasma generation region (6) is not more than 0.15 Torr.
Claim 4
Dependent Claim
26 words
A method according to claim 1, characterized in that a ratio of the chlorine included in said plasma gas is not more than 40% by volume.
Claim 5
Dependent Claim
25 words
A method according to claim 1, characterized in that the high-frequency electric power has a density of 0.1 W/cm 2 to 1 W/cm 2 .
Claim 6
Dependent Claim
24 words
A method according to claim 1, characterized in that said compound semiconductor is a member selected from the group consisting of GaAs and GaAlAs.
Claim 7
Dependent Claim
34 words
A method according to claim 1, characterized in that said compound semiconductor is formed on a GaAs substrate and is a multilayer having a plurality of GaAIAs layers respectively having different contents of aluminum.
References Cited (Backward Citations)
No citation records indexed.
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