Gallium nitride-based compound semiconductor light-emitting element

Abstract

Abstract PURPOSE:To obtain a thick N-layer whose crystal property is good by a method wherein an AlN buffer layer is formed on a sapphire substrate and an N-layer composed of an N-type GaN-based compound semiconductor is formed on it by a halide vapor growth method. CONSTITUTION:A sapphire substrate 2 is attached to a susceptor of an MOVPE apparatus; an AlN buffer layer 3 is formed; after that, an N-type GaN layer 4 is formed at a growth speed of about 1mum/min by using a halide vapor growth apparatus. Then, a second N-type layer 8 of N-type GaN and an I-type GaN layer 5 are formed by an MOVPE method; electrodes 6, 7 are evaporated; a light-emitting diode is completed. When the second N-layer 8 which has been grown precisely by the MOVPE method is formed on the first N-layer 4, a crystallinity of the I-layer 5 can be made much better.

Inventors

• 👤 Katsuhide Manabe
• 👤 勝英 真部
• 👤 Michinari Sasa
• 👤 道成 佐々
• 👤 Akira Mabuchi
• 👤 馬渕　彰
• 👤 Isamu Akasaki
• 👤 勇 赤崎
• 👤 Hiroshi Amano
• 👤 浩 天野

Bibliographic Details