US5218216A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
Assignee: Nagoya University
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Filing: 1991-12-20
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Granted: 1993-06-08
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Expires: 2011-12-20
Abstract
Abstract A thin film of SiO 2 is patterned on an N layer consisting of N-type Al x Ga 1-x N (inclusive of x=0). Next, I-type Al x Ga 1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO 2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.
Inventors
- 👤 Katsuhide Manabe
- 👤 Nobuo Okazaki
- 👤 Isamu Akasaki
- 👤 Kazumasa Hiramatsu
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/36; H10P14/3602
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
33 words
A gallium nitride group semiconductor light emitting diode comprising: a sapphire substrate having a surface a ({1120}), and a buffer layer of aluminum nitride (AlN) formed on said surface of said sapphire substrate.
Claim 2
Dependent Claim
33 words
A gallium nitride group semiconductor light emitting diode comprising: a sapphire substrate having a surface a ({1120}), and a buffer layer of aluminum nitride (AlN) formed on said surface of said sapphire substrate.
Claim 3
Dependent Claim
30 words
A gallium nitride group semiconductor comprising: a sapphire substrate having a surface a ({1120}), and a buffer layer of aluminum nitride (AlN) formed on said surface of said sapphire substrate.
Claim 4
Dependent Claim
30 words
A gallium nitride group semiconductor comprising: a sapphire substrate having a surface a ({1120}), and a buffer layer of aluminum nitride (AlN) formed on said surface of said sapphire substrate.
Claim 5
Dependent Claim
216 words
A gallium nitride group semiconductor light emitting diode comprising: a sapphire substrate, a buffer layer of aluminum nitride, AlN, formed on a surface of said sapphire substrate; an N layer of an N-type gallium nitride group semiconductor of a form Al x Ga 1-x N, inclusive of X=0, formed on said buffer layer, carriers of which are electrons and which exhibit an N-type electric conduction; an SiO 2 very thin film, partially formed with a predetermined pattern on a surface of said N layer, and being sufficiently thin that electrons can pass therethrough to reach said N layer; a single crystalline I layer of an I-type gallium nitride group semiconductor of a form (Al x Ga 1-x N, inclusive of X=0, which is selectively grown on exposed portions of said N layer and is an insulator, said I layer having an upper surface; an electric lead for conducting electrons to said N layer through said SiO 2 thin film, which is electrically conducting and is formed of a non-single crystalline structure selectively grown on said SiO 2 thin film in a simultaneous growing process with said I layer, said electric lead having an upper surface, and first and second electrode layers directly joined to said upper surfaces of said I layer and said electric lead, respectively.
Claim 6
Dependent Claim
216 words
A gallium nitride group semiconductor light emitting diode comprising: a sapphire substrate, a buffer layer of aluminum nitride, AlN, formed on a surface of said sapphire substrate; an N layer of an N-type gallium nitride group semiconductor of a form Al x Ga 1-x N, inclusive of X=0, formed on said buffer layer, carriers of which are electrons and which exhibit an N-type electric conduction; an SiO 2 very thin film, partially formed with a predetermined pattern on a surface of said N layer, and being sufficiently thin that electrons can pass therethrough to reach said N layer; a single crystalline I layer of an I-type gallium nitride group semiconductor of a form (Al x Ga 1-x N, inclusive of X=0, which is selectively grown on exposed portions of said N layer and is an insulator, said I layer having an upper surface; an electric lead for conducting electrons to said N layer through said SiO 2 thin film, which is electrically conducting and is formed of a non-single crystalline structure selectively grown on said SiO 2 thin film in a simultaneous growing process with said I layer, said electric lead having an upper surface, and first and second electrode layers directly joined to said upper surfaces of said I layer and said electric lead, respectively.
Claim 7
Dependent Claim
28 words
The gallium nitride group semiconductor light emitting diode as claimed in claim 3, wherein the surface of said sapphire substrate is a surface "a" of a (1120) orientation.
Claim 8
Dependent Claim
28 words
The gallium nitride group semiconductor light emitting diode as claimed in claim 3, wherein the surface of said sapphire substrate is a surface "c" of an orientation (0001).
Claim 9
Dependent Claim
27 words
The gallium nitride group semiconductor light emitting diode as claimed in claim 3, wherein said SiO 2 very thin film is 20 to 400 angstroms in thickness.
Claim 10
Dependent Claim
209 words
A gallium nitride group semiconductor light emitting diode comprising: an N layer of N-type gallium nitride group semiconductor having a form Al x Ga 1-x N, inclusive of X=0, carriers of which are electrons and which exhibits an N-type electric conduction; an SiO 2 thin film formed with a predetermined pattern on at least part of a surface of said N layer, and being sufficiently thin such that electrons can pass therethrough to reach said N layer; a single crystalline I layer of an I-type gallium nitride group semiconductor having a form Al x Ga 1-x N, inclusive of X=0, which is selectively grown on exposed portions of said N layer and is an insulator, said I layer having an upper surface; an electric lead for conducting electrons to said N layer through said SiO 2 thin film, which is electrically conducting and is formed with a non-single crystalline portion, selectively growth on said SiO 2 very thin film in a simultaneous growing process with said I layer, said electric lead having an upper surface; and first and second electrode layers directly joined to said upper surfaces of said I layer and said electric lead, respectively, wherein said SiO 2 thin film is 20 to 400 angstroms in thickness.
Claim 11
Dependent Claim
209 words
A gallium nitride group semiconductor light emitting diode comprising: an N layer of N-type gallium nitride group semiconductor having a form Al x Ga 1-x N, inclusive of X=0, carriers of which are electrons and which exhibits an N-type electric conduction; an SiO 2 thin film formed with a predetermined pattern on at least part of a surface of said N layer, and being sufficiently thin such that electrons can pass therethrough to reach said N layer; a single crystalline I layer of an I-type gallium nitride group semiconductor having a form Al x Ga 1-x N, inclusive of X=0, which is selectively grown on exposed portions of said N layer and is an insulator, said I layer having an upper surface; an electric lead for conducting electrons to said N layer through said SiO 2 thin film, which is electrically conducting and is formed with a non-single crystalline portion, selectively growth on said SiO 2 very thin film in a simultaneous growing process with said I layer, said electric lead having an upper surface; and first and second electrode layers directly joined to said upper surfaces of said I layer and said electric lead, respectively, wherein said SiO 2 thin film is 20 to 400 angstroms in thickness.
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