US4700215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polycide electrodes for integrated circuits
Assignee: Texas Instruments Inc
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Filing: 1981-11-19
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Granted: 1987-10-13
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Expires: 2001-11-19
Abstract
Abstract A semiconductor integrated circuit has electrodes, contacts and interconnects composed of a multilayer structure including a layer of polycrystalline silicon with an overlying layer of a refractory metal silicide such as MoSi 2 or WSi 2 . Adhesion of the metal silicide to the polysilicon is enhanced by forming a thin silicon oxide coating on the polysilicon before sputtering the metal silicide. The resulting structure has low resistance but retains the advantages of polysilicon on silicon.
Inventors
- 👤 Joe W. McPherson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:20
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
67 words
A semiconductor device comprising at least one region in a face of a semiconductor body and a polycrystalline silicon electrode on said face associated with the region, a layer overlying said electrode composed of a silicide of a refractory metal, and a thin region of silicon oxide particles at the interface between the layer and the electrode, the layer making low-resistance ohmic electrical contact to the electrode.
Claim 2
Dependent Claim
67 words
A semiconductor device comprising at least one region in a face of a semiconductor body and a polycrystalline silicon electrode on said face associated with the region, a layer overlying said electrode composed of a silicide of a refractory metal, and a thin region of silicon oxide particles at the interface between the layer and the electrode, the layer making low-resistance ohmic electrical contact to the electrode.
Claim 3
Dependent Claim
14 words
A device according to claim 1 wherein the electrode is composed of molybdenum disilicide.
Claim 4
Dependent Claim
14 words
A device according to claim 1 wherein the electrode is composed of tungsten disilicide.
Claim 5
Dependent Claim
61 words
A semiconductor device having an electrode on a face of a semiconductor body, the electrode composed of a layer of molybdenum or tungsten silicide adhered to an underlying layer of polycrystalline silicon by a thin interface region of discontinuous silicon oxide between the silicide and the polycrystalline silicon to enhance adhesion, the silicide making low-resistance ohmic connection to said polycrystalline silicon.
Claim 6
Dependent Claim
61 words
A semiconductor device having an electrode on a face of a semiconductor body, the electrode composed of a layer of molybdenum or tungsten silicide adhered to an underlying layer of polycrystalline silicon by a thin interface region of discontinuous silicon oxide between the silicide and the polycrystalline silicon to enhance adhesion, the silicide making low-resistance ohmic connection to said polycrystalline silicon.
Claim 7
Dependent Claim
17 words
A device according to claim 4 wherein said electrode is the gate of an insulated-gate field-effect transistor.
Claim 8
Dependent Claim
13 words
A device according to claim 5 wherein said transistor is an N-channel transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-12 | 1991-04-13 | 1991-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-12 | 1995-04-13 | 1995-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-12 | 1999-04-13 | 1999-10-13 | $7700.00 | Window Closed / Lapsed |