Gallium nitride growing method

Abstract

Abstract PURPOSE: To obtain an epitaxially grown layer with satisfactory characteristics by selecting a face inclined by 0.5W4° from the low index face of a substrate crystal for the face orientation of the crystal in the epitaxial growth of gallium nitride on the substrate. CONSTITUTION: The titled growing method is characterized by the selection of a face inclined by 0.5W4° from the low index face of a substrate crystal for the face orientation of the crystal. When the (0001) face of an α-Al 2 O 3 single crystal or hexagonal system SiC and the (111) face of spinel is used as a substrate, a face inclined by 0.5W4° in the [10-10] or [11-20] direction and [110] or [100] direction, respectively is used. By growing gallium nitride using such a substrate crystal with off-angle, an epitaxial layer with satisfactory characteristics is obtd. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Yoshimasa Oki
• 👤 Yukio Toyoda
• 👤 Atsuyuki Kobayashi

Bibliographic Details