US5733796A
Expired / Lapsed
US
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Light-emitting semiconductor device using gallium nitride group compound
Assignee: Nagoya University
•
Filing: 1995-11-09
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Granted: 1998-03-31
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Expires: 2015-11-09
Abstract
Abstract A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al x Ga 1-x N) having an i L -layer of insulating gallium nitride compound semiconductor (Al x Ga 1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i H -layer of insulating gallium nitride compound semiconductor (Al x Ga 1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al x Ga 1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i L -layer. An n + -layer of n-type gallium nitride compound semiconductor (Al x Ga 1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.
Inventors
- 👤 Katsuhide Manabe
- 👤 Akira Mabuchi
- 👤 Hisaki Kato
- 👤 Michinari Sassa
- 👤 Norikatsu Koide
- 👤 Shiro Yamazaki
- 👤 Masafumi Hashimoto
- 👤 Isamu Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/8215
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
143 words
A method for producing a gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor having a wurtzite-type crystal structure from an organometallic compound by vapor phase epitaxy on said buffer layer on said single crystal sapphire substrate; and in said step of producing said semiconductor, controlling a mixing ratio in a process of vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form a layer of an n-type gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0 and having a selected resistivity ranging from 3×10 -1 Ωcm to 8×10 -3 Ωcm and a carrier concentration ranging from 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 2
Independent Claim
143 words
A method for producing a gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor having a wurtzite-type crystal structure from an organometallic compound by vapor phase epitaxy on said buffer layer on said single crystal sapphire substrate; and in said step of producing said semiconductor, controlling a mixing ratio in a process of vapor phase epitaxy by feeding a silicon-containing gas and other raw material gases together so as to form a layer of an n-type gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0 and having a selected resistivity ranging from 3×10 -1 Ωcm to 8×10 -3 Ωcm and a carrier concentration ranging from 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 3
Independent Claim
143 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor device having a wurtzite-type crystal structure from an organometallic compound by said vapor phase epitaxy on said buffer layer formed on said single crystal sapphire substrate; and in said step of producing said semiconductor device, feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio to said single crystal sapphire substrate so as to form said n-layer having a selected resistivity ranging from 3×10 -1 Ωcm to 8×10 -3 Ωcm and a carrier concentration ranging from 6×10 16 /cm 3 to 3×10 18 /cm 3 .
Claim 4
Independent Claim
143 words
A method for producing, from an organometallic compound by vapor phase epitaxy, a light-emitting semiconductor device comprising an n-layer of n-type gallium nitride compound semiconductor satisfying the formula Al x Ga 1-x N, inclusive of x=0, said method comprising: producing a buffer layer on a single crystal sapphire substrate; producing said semiconductor device having a wurtzite-type crystal structure from an organometallic compound by said vapor phase epitaxy on said buffer layer formed on said single crystal sapphire substrate; and in said step of producing said semiconductor device, feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio to said single crystal sapphire substrate so as to form said n-layer having a selected resistivity ranging from 3×10 -1 Ωcm to 8×10 -3 Ωcm and a carrier concentration ranging from 6×10 16 /cm 3 to 3×10 18 /cm 3 .
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| 3.5 Years (Year 4) | 2001-03-30 | 2001-09-29 | 2002-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
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