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US6440860B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

Assignee: Micron Technology Inc
•
Filing: 2000-01-18
•
Granted: 2002-08-27
•
Expires: 2020-01-18
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Abstract

Abstract The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

Inventors

  • 👤 Scott Jeffrey DeBoer
  • 👤 John T. Moore

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 03:07
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/405; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/66; H10P14/662; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P50/00; H10P50/71; H10P50/73; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 98 words
A semiconductor processing method, comprising: forming a first material comprising silicon and nitrogen on a substrate; forming a second material over the first material, the second material comprising silicon and less nitrogen, by atom percent, than the first material; forming an imagable material on the second material; patterning the imagable material; transferring a pattern from the patterned imagable material to the first and second materials; after transferring the pattern, removing the imagable material; forming a layer of third material over the second material; and after removing the imagable material, removing the second material from over the first material.
Claim 2
Dependent Claim 98 words
A semiconductor processing method, comprising: forming a first material comprising silicon and nitrogen on a substrate; forming a second material over the first material, the second material comprising silicon and less nitrogen, by atom percent, than the first material; forming an imagable material on the second material; patterning the imagable material; transferring a pattern from the patterned imagable material to the first and second materials; after transferring the pattern, removing the imagable material; forming a layer of third material over the second material; and after removing the imagable material, removing the second material from over the first material.
Claim 3
Dependent Claim 11 words
The method of claim 1 wherein the imagable material is photoresist.
Claim 4
Dependent Claim 22 words
The method of claim 1 wherein the imagable material is photoresist and the patterning comprises exposing the photoresist to deep UV radiation.
Claim 5
Dependent Claim 13 words
The method of claim 1 wherein the second material consists essentially of silicon.
Claim 6
Dependent Claim 14 words
The method of claim 1 wherein the second material consists essentially of conductively-doped silicon.
Claim 7
Dependent Claim 11 words
The method of claim 1 wherein the second material comprises oxygen.
Claim 8
Dependent Claim 12 words
The method of claim 1 wherein the second material comprises silicon dioxide.
Claim 9
Dependent Claim 27 words
The method of claim 1 wherein the patterned first material comprises a sidewall, and wherein etching the layer of third material forms a spacer along the sidewall.
Claim 10
Dependent Claim 24 words
The method of claim 8 wherein the second material comprises silicon and is substantially free of nitrogen, and the third material comprises silicon nitride.
Claim 11
Dependent Claim 25 words
The method of claim 8 wherein the second material comprises conductively-doped silicon and is substantially free of nitrogen, and the third material comprises silicon nitride.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-08-26 2006-02-25 2006-08-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2009-08-26 2010-02-25 2010-08-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2013-08-26 2014-02-25 2014-08-27 $7700.00 Window Closed / Lapsed

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