US5648202A
Expired / Lapsed
US
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Method of forming a photoresist pattern using an anti-reflective
Assignee: Sony Corp
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Filing: 1995-09-28
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Granted: 1997-07-15
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Expires: 2015-09-28
Abstract
Abstract A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
Inventors
- 👤 Tohru Ogawa
- 👤 Tetsuo Gocho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:12
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/70; G03F7/70691; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/71; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2042; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/031; Y; Y10; Y10S; Y10S430/00; Y10S430/151
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
100 words
A method of forming a photoresist pattern, said method comprising the steps of: forming a first layer; forming an anti-reflective layer of an inorganic material composed of Si, O and N on the first layer; forming a photoresist layer on said anti-reflective layer; exposing said photoresist layer selectivity by a monochromatic light to form exposed and non-exposed imagewise areas; and developing said photoresist layer after said exposing to remove some of the imagewise areas of the photoresist layer to uncover portions of the anti-reflective layer, wherein said anti-reflective layer is formed to minimize standing wave effect in said photoresist layer.
Claim 2
Independent Claim
100 words
A method of forming a photoresist pattern, said method comprising the steps of: forming a first layer; forming an anti-reflective layer of an inorganic material composed of Si, O and N on the first layer; forming a photoresist layer on said anti-reflective layer; exposing said photoresist layer selectivity by a monochromatic light to form exposed and non-exposed imagewise areas; and developing said photoresist layer after said exposing to remove some of the imagewise areas of the photoresist layer to uncover portions of the anti-reflective layer, wherein said anti-reflective layer is formed to minimize standing wave effect in said photoresist layer.
Claim 3
Dependent Claim
34 words
A method of forming a photoresist pattern according to claim 1, which includes performing a step of forming a second layer between the steps of forming the anti-reflective layer and forming the photoresist layer.
Claim 4
Dependent Claim
44 words
A method of forming a photoresist pattern according to claim 1, wherein said monochromatic light has a wavelength 150-450nm, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a thickness d, wherein 1.2<n<5.7; 0<k<1.4; and 10 nm<d<100nm.
Claim 5
Dependent Claim
45 words
A method of forming a photoresist pattern according to claim 1, wherein said monochromatic light has a wavelength 150-450nm, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a thickness d, wherein 1.2<n<3.4; 0.16<k<0.72; and 10 nm<d<100 nm.
Claim 6
Dependent Claim
32 words
A method of forming a photoresist pattern according to claim 4, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer.
Claim 7
Dependent Claim
45 words
A method of forming a photoresist pattern according to claim 1, wherein said monochromatic light has a wavelength 150-450nm, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a thickness d, wherein 1.9<n<5.7; 0<k<0.46; and 25 nm<d<100 nm.
Claim 8
Dependent Claim
32 words
A method for forming a photoresist pattern according to claim 6, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer.
Claim 9
Dependent Claim
45 words
A method of forming a photoresist pattern according to claim 1, wherein said monochromatic light has a wavelength 150-450nm, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a thickness d, wherein 1.2<n<3.4; 0.4<k<1.4; and 10 nm<d<100 nm.
Claim 10
Dependent Claim
34 words
A method of forming a photoresist pattern according to claim 8, wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer and a metal alloy layer.
Claim 11
Dependent Claim
45 words
A method of forming a photoresist pattern according to claim 1, wherein said monochromatic light has a wavelength 150-450nm, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a thickness d, wherein 1.9<n<5.7; 0.2<k<0.62; and 25 nm<d<100 nm.
Claim 12
Dependent Claim
33 words
A method of forming a photoresist pattern according to claim 10, wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer and metal alloy layer.
Claim 13
Dependent Claim
43 words
A method of forming a photoresist pattern according to claim 1, wherein said anti-reflective layer has a composition of SiO x N y H z , wherein x is 0.3 to 1.30, y is 0.09 to 0.35 and z is 0 to 0.85.
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