US5472827A
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Method of forming a resist pattern using an anti-reflective layer
Assignee: Sony Corp
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Filing: 1993-12-29
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Granted: 1995-12-05
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Expires: 2013-12-29
Abstract
Abstract A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
Inventors
- 👤 Tohru Ogawa
- 👤 Tetsuo Gocho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:29
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/70; G03F7/70691; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/71; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2042; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/031; Y; Y10; Y10S; Y10S430/00; Y10S430/151
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
97 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer; forming an anti-reflective layer of SiO x N y H z on said first layer, wherein x is 0.3 to 0.8, y is 0.1 to 0.3 and z is 0 to 0.6; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 2
Independent Claim
97 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer; forming an anti-reflective layer of SiO x N y H z on said first layer, wherein x is 0.3 to 0.8, y is 0.1 to 0.3 and z is 0 to 0.6; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein the first layer is Tungsten silicide.
Claim 4
Dependent Claim
31 words
A method according to claim 1, which includes a step of forming a second layer between the step of forming the anti-reflective layer and the step of forming a photoresist layer.
Claim 5
Dependent Claim
14 words
A method according to claim 3, wherein the first layer is a Tungsten silicide.
Claim 6
Dependent Claim
15 words
A method according to claim 1, wherein the second layer is a silicon oxide layer.
Claim 7
Independent Claim
99 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer and a metal alloy layer; forming an anti-reflective layer of SiO x N y H z on said first layer, wherein x is 0.3 to 0.7, y is 0.05 to 0.3 and z is 0 to 0.5; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 8
Independent Claim
99 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer and a metal alloy layer; forming an anti-reflective layer of SiO x N y H z on said first layer, wherein x is 0.3 to 0.7, y is 0.05 to 0.3 and z is 0 to 0.5; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 9
Dependent Claim
19 words
A method according to claim 6, wherein the first layer is selected from an aluminum and aluminum silicon alloy.
Claim 10
Dependent Claim
35 words
A method according to claim 6, which includes a step of forming a second layer on said anti-reflective layer between the step of forming the anti-reflective layer and the step of forming a photoresist layer.
Claim 11
Dependent Claim
15 words
A method according to claim 8, wherein the second layer is a silicon oxide layer.
Claim 12
Independent Claim
96 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer; forming an anti-reflective layer of SiO x N y H z with x>0, y >0 and z>0 on said first layer by vapor phase deposition using a raw gas containing at least silicon element and oxide element, wherein the ratio of the silicon element to oxide element is as follows: 0.4≦Si/O≦3; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450 nm; and developing said photoresist layer after said exposing.
Claim 13
Independent Claim
96 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer; forming an anti-reflective layer of SiO x N y H z with x>0, y >0 and z>0 on said first layer by vapor phase deposition using a raw gas containing at least silicon element and oxide element, wherein the ratio of the silicon element to oxide element is as follows: 0.4≦Si/O≦3; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450 nm; and developing said photoresist layer after said exposing.
Claim 14
Dependent Claim
47 words
A method according to claim 10, wherein the step of forming said anti-reflective layer is by vapor phase deposition using SiH 4 and N 2 O as raw gas and said gas ratio of said SiH 4 and N 2 O is as follows: 0.4≦SiH.sub.4 /N.sub.2 O≦3.
Claim 15
Independent Claim
89 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer; forming an anti-reflective layer of SiO x N y H z with x>0, y>0 and z≧0 on said first layer by vapor phase deposition using a raw gas containing SiH 4 and N 2 O in a ratio as follows: 0.2≦SiH 4 /N 2 O≦2; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 16
Independent Claim
89 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer; forming an anti-reflective layer of SiO x N y H z with x>0, y>0 and z≧0 on said first layer by vapor phase deposition using a raw gas containing SiH 4 and N 2 O in a ratio as follows: 0.2≦SiH 4 /N 2 O≦2; forming a photoresist layer over said anti-reflective layer; selectively exposing said photoresist layer with monochromatic light having a wave length 150˜450nm; and developing said photoresist layer after said exposing.
Claim 17
Dependent Claim
54 words
A method according to claim 12, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer, and wherein for the SiO x N y H z , x is 0.3 to 0.7, y is 0.1 to 0.3 and z is 0 to 0.6.
Claim 18
Dependent Claim
56 words
A method according to claim 12 wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer and a metal alloy layer, and wherein for the SiO x N y H z , x is 0.3 to 0.7, y is 0.05 to 0.3 and z is 0 to 0.5.
References Cited (Backward Citations)
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